DocumentNumber:A3G35H100--04S NXPSemiconductors Rev. 0, 05/2018 Technical Data RFPowerGaNTransistor This 14 W asymmetrical Doherty RF power GaN transistor is designed for A3G35H100--04SR3 cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 3400 to 3600 MHz. This part is characterized and performance is guaranteed for applications operatinginthe3400to3600MHzband.Thereisnoguaranteeofperformance 34003600MHz,14WAVG.,48V when this part is used in applications designed outside of these frequencies. AIRFASTRFPOWERGaN 3500MHz TRANSISTOR Typical Doherty Single--Carrier W--CDMA Performance: V =48Vdc, DD I =80mA,V = 5.0 Vdc, P = 14 W Avg., Input Signal DQA GSB out PAR = 9.9 dB 0.01% Probability on CCDF. G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 3400 MHz 14.0 43.8 9.6 34.0 3500 MHz 14.0 41.4 9.7 34.5 NI--780S--4L 3600 MHz 14.0 42.5 9.6 32.2 Features Carrier High terminal impedances for optimal broadband performance RF /V31 RF /V inA GSA outA DSA Advanced high performance in--package Doherty Able to withstand extremely high output VSWR and broadband operating conditions RF /V42 RF /V inB GSB outB DSB Peaking (Top View) Figure1.PinConnections 2018 NXP B.V. A3G35H100--04SR3 RF Device Data NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 125 Vdc DSS Gate--Source Voltage V 8, 0 Vdc GS Operating Voltage V 0to+55 Vdc DD Maximum Forward Gate Current T =25 C I 13.4 mA C GMAX Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 55to+150 C C Operating Junction Temperature Range T 55to+225 C J (1) Absolute Maximum Junction Temperature T 275 C MAX Table2.ThermalCharacteristics Characteristic Symbol Value Unit (2) Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case R (IR) 2.3 C/W JC Case Temperature 71C, P =24.3 W D (3) Thermal Resistance by Finite Element Analysis, Junction--to--Case R (FEA) 3.88 C/W JC Case Temperature 90C, P =24W D Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JS--001--2017) 1C Charge Device Model (per JS--002--2014) C2 Table4.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Drain--Source Breakdown Voltage V Vdc (BR)DSS (V =8Vdc,I =5.4 mAdc) Carrier 150 GS D (V =8Vdc,I =8.04 mAdc) Peaking 150 GS D OnCharacteristics -- SideA,Carrier Gate Threshold Voltage V 3.8 3.1 2.3 Vdc GS(th) (V =10Vdc,I =5.4mAdc) DS D Gate Quiescent Voltage V 3.6 2.9 2.6 Vdc GSA(Q) (V =48Vdc,I =80 mAdc, Measured in Functional Test) DD DA Gate--Source Leakage Current I 1.7 mAdc GSS (V =0Vdc,V =5Vdc) DS GS OnCharacteristics -- SideB,Peaking Gate Threshold Voltage V 3.8 3.2 2.3 Vdc GS(th) (V =10Vdc,I =8.04mAdc) DS D Gate--Source Leakage Current I 2.5 mAdc GSS (V =0Vdc,V =5Vdc) DS GS 1. Functionaloperationabove225 Chasnotbeencharacterizedandisnotimplied.OperationatT (275 C)reducesmediantimetofailure MAX by an order of magnitude operation beyond T could cause permanent damage. MAX 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to