X-On Electronics has gained recognition as a prominent supplier of PMBFJ113,215 rf jfet transistors across the USA, India, Europe, Australia, and various other global locations. PMBFJ113,215 rf jfet transistors are a product manufactured by NXP. We provide cost-effective solutions for rf jfet transistors, ensuring timely deliveries around the world.

PMBFJ113,215

PMBFJ113,215 electronic component of NXP
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Part No.PMBFJ113,215
Manufacturer: NXP
Category:RF JFET Transistors
Description: RF JFET Transistors TAPE7 FET-RFSS
Datasheet: PMBFJ113,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.251 ea
Line Total: USD 753

Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 3000
Multiples : 1
3000 : USD 0.251

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Brand
Gate-Source Cutoff Voltage
Rds On - Drain-Source Resistance
Factory Pack Quantity :
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We proudly offer the PMBFJ113,215 RF JFET Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the PMBFJ113,215 RF JFET Transistors.

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits High-speed switching Interchangeability of drain and source connections Low R at zero gate voltage (< 30 for PMBFJ111). DSon 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1. Pinning [1] Pin Description Simplified outline Symbol 1drain 3 2source 3gate 1 3 2 12 sym053 [1] Drain and source are interchangeable. SOT23PMBFJ111; PMBFJ112; PMBFJ113 NXP Semiconductors N-channel junction FETs 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package; 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3. Marking [1] Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBFJ113 47* [1] * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 40 V DS V gate-source voltage - 40 V GSO V gate-drain voltage - 40 V GDO I forward gate current (DC) - 50 mA G [1] P total power dissipation T = 25 C -300 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j [1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 6. Thermal characteristics Table 5. Thermal characteristics T = P (R +R +R )+T . j th(j-t) th(t-s) th(s-a) amb Symbol Parameter Conditions Typ Unit [1] R thermal resistance from junction to ambient 430 K/W th(j-a) [2] thermal resistance from junction to ambient 500 K/W [1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. [2] Mounted on printed circuit board. PMBFJ111_112_113 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 20 September 2011 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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