PMBFJ620,115 NXP

PMBFJ620 Dual N-channel field-effect transistor Rev. 3 6 March 2014 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits Two field effect transistors in a single package Low noise Interchangeability of drain and source connections High gain. 1.3 Applications AM input stage in car radios VHF amplifiers Oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per FET V drain-source voltage - - 25 V DS V gate-source cut-off V =10V I =1 A 2- 6.5 V GSoff DS D voltage I drain current V = 0 V V =10V 24 - 60 mA DSS GS DS P total power T 90 C--190mW tot s dissipation y forward transfer V = 10 V 10 - - mS fs DS admittance I =10mA DPMBFJ620 NXP Semiconductors Dual N-channel field-effect transistor 2. Pinning information Table 2. Discrete pinning information Pin Description Simplified outline Symbol 1 source (1) 2 source (2) 3 gate (2) 4drain (2) 5drain (1) P 6 gate (1) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBFJ620 - plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking 1 Type number Marking code PMBFJ620 A8* 1 * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. PMBFJ620 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved. Product data sheet Rev. 3 6 March 2014 2 of 14 V