X-On Electronics has gained recognition as a prominent supplier of PMBFJ174,215 JFET across the USA, India, Europe, Australia, and various other global locations. PMBFJ174,215 JFET are a product manufactured by NXP. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

PMBFJ174,215 NXP

PMBFJ174,215 electronic component of NXP
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Part No.PMBFJ174,215
Manufacturer: NXP
Category: JFET
Description: JFET JFET P-CH 30V 5MA
Datasheet: PMBFJ174,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1617 ea
Line Total: USD 485.1 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1617

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Configuration
Mounting Style
Packaging
Drain Source Voltage Vds
Package Case
Brand
Continuous Drain Current
Gate-Source Breakdown Voltage
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMBFJ174,215 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBFJ174,215 and other electronic components in the JFET category and beyond.

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DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is 3 the interchangeability of the drain and handbook, halfpage source connections. d g s PINNING 12 1 = drain Top view MAM386 2 = source 3= gate Note 1. Drain and source are interchangeable. Fig.1 Simplified outline and symbol, SOT23. Marking codes: 174 : p6X 175 : p6W 176 : p6S 177 : p6Y QUICK REFERENCE DATA Drain-source voltage V max. 30 V DS Gate-source voltage V max. 30 V GSO Gate current I max. 50 mA G Total power dissipation up to T =25 CP max. 300 mW amb tot PMBFJ174 175 176 177 Drain current 20 7 2 1.5 mA V =15 V V =0 DS GS I DSS 135 70 35 20 mA Drain-source ON-resistance V = 0.1 V V =0 R 85 125 250 300 DS GS DS on April 1995 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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