X-On Electronics has gained recognition as a prominent supplier of PMBFJ111,215 JFET across the USA, India, Europe, Australia, and various other global locations. PMBFJ111,215 JFET are a product manufactured by NXP. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

PMBFJ111,215 NXP

PMBFJ111,215 electronic component of NXP
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Part No.PMBFJ111,215
Manufacturer: NXP
Category: JFET
Description: JFET JFET N-CH 40V 35mA
Datasheet: PMBFJ111,215 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2508 ea
Line Total: USD 752.4 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 1
3000 : USD 0.2508
6000 : USD 0.2449

   
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RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
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We are delighted to provide the PMBFJ111,215 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBFJ111,215 and other electronic components in the JFET category and beyond.

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PMBFJ111 PMBFJ112 PMBFJ113 N-channel junction FETs Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features and benefits High-speed switching Interchangeability of drain and source connections Low R at zero gate voltage (< 30 for PMBFJ111). DSon 1.3 Applications Analog switches Choppers Commutators Multiplexers Thin and thick film hybrids. 2. Pinning information Table 1. Pinning 1 Pin Description Simplified outline Symbol 1drain 3 2source 3gate 1 3 2 12 sym053 1 Drain and source are interchangeable. SOT23PMBFJ111 PMBFJ112 PMBFJ113 NXP Semiconductors N-channel junction FETs 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PMBFJ111 - plastic surface mounted package 3 leads SOT23 PMBFJ112 PMBFJ113 4. Marking Table 3. Marking 1 Type number Marking code PMBFJ111 41* PMBFJ112 42* PMBFJ113 47* 1 * = p: Made in Hong Kong * = t: Made in Malaysia * = W: Made in China 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage (DC) - 40 V DS V gate-source voltage - 40 V GSO V gate-drain voltage - 40 V GDO I forward gate current (DC) - 50 mA G 1 P total power dissipation T = 25 C -300 mW tot amb T storage temperature 65 +150 C stg T junction temperature - 150 C j 1 Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 6. Thermal characteristics Table 5. Thermal characteristics T = P (R +R +R )+T . j th(j-t) th(t-s) th(s-a) amb Symbol Parameter Conditions Typ Unit 1 R thermal resistance from junction to ambient 430 K/W th(j-a) 2 thermal resistance from junction to ambient 500 K/W 1 Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm. 2 Mounted on printed circuit board. PMBFJ111 112 113 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 20 September 2011 2 of 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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