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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PF5102 N-Channel Switch December 2011 PF5102 N-Channel Switch Features This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51. See J111 for characteristics. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* T = 25C unless otherwise noted a Symbol ParameterValueUnits V Drain-Gate Voltage 40 V DG V Gate-Source Voltage -40 V GS I Forward Gate Current 50 mA GF T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T = 25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25C 5.0 mW/C R Thermal Resistance, Junction to Case 125 C/W JC R Thermal Resistance, Junction to Ambient 357 C/W JA Electrical Characteristics T = 25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Gate-Source Breakdown Voltage I = -1.0A, V = 0 -40 V (BR)GSS G DS I Gate Reverse Current V = -15V, V = 0 -1.0 nA GSS GS DS V = -15V, V = 0, T = 125C -0.2 A GS DS A V Gate-Source Cutoff Voltage V = 15V, I = 1.0nA -0.7 -1.6 V GS(off) DS D V Gate-Source Forward Voltage I = 1.0mA, V = 0 1.0 V GS(f) G DS On Characteristics I Zero-Gate Voltage Drain Current * V = 15V, V = 0 4.0 20 mA DSS DS GS Small Signal Characteristics g Forward Transfer Conductance V = 15V, V = 0, f = 1.0KHz 11,000 mhous fs DS GS g Output Conductance V = 15V, I = 500 A, f = 1.0KHz 25 mhous oss DS D C Input Capacitance V = 15V, V = 0, f = 1.0MHz 16 pF iss DG GS C Reverse Transfer Capacitance V = 15V, V = 0, f = 1.0MHz 6 pF rss DG GS * Pulse Test: Pulse Width 300s, Duty Cycle 1.0% 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com PF5102 Rev. B0 1