X-On Electronics has gained recognition as a prominent supplier of PN2222ARLRAG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PN2222ARLRAG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PN2222ARLRAG ON Semiconductor

PN2222ARLRAG electronic component of ON Semiconductor
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See Product Specifications
Part No.PN2222ARLRAG
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 600mA 75V NPN
Datasheet: PN2222ARLRAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.0456 ea
Line Total: USD 91.2 
Availability - 0
MOQ: 2000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 2000
1 : USD 0.2539

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 1
2000 : USD 0.1726
6000 : USD 0.1228
16000 : USD 0.0843
30000 : USD 0.0756

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 2000
Multiples : 1
2000 : USD 0.0456
14000 : USD 0.0432

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3562
Multiples : 3562
3562 : USD 0.1181

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 620
Multiples : 620
620 : USD 0.2539

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1380
Multiples : 1380
1380 : USD 0.1406

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1380
Multiples : 1380
1380 : USD 0.1406

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1379
Multiples : 1379
1379 : USD 0.1208

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1859
Multiples : 1859
1859 : USD 0.1952

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the PN2222ARLRAG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PN2222ARLRAG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PN2222, PN2222A General Purpose Transistors NPN Silicon PN2222, PN2222A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage PN2222 V 30 Vdc (BR)CEO (I = 10 mAdc, I = 0) PN2222A 40 C B Collector Base Breakdown Voltage PN2222 V 60 Vdc (BR)CBO (I = 10 Adc, I = 0) PN2222A 75 C E Emitter Base Breakdown Voltage PN2222 V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) PN2222A 6.0 E C Collector Cutoff Current I nAdc CEX (V = 60 Vdc, V = 3.0 Vdc) PN2222A 10 CE EB(off) Collector Cutoff Current I Adc CBO (V = 50 Vdc, I = 0) PN2222 0.01 CB E (V = 60 Vdc, I = 0) PN2222A 0.01 CB E (V = 50 Vdc, I = 0, T = 125C) PN2222 10 CB E A (V = 50 Vdc, I = 0, T = 125C) PN2222A 10 CB E A Emitter Cutoff Current I nAdc EBO (V = 3.0 Vdc, I = 0) PN2222A 100 EB C Base Cutoff Current I nAdc BL (V = 60 Vdc, V = 3.0 Vdc) PN2222A 20 CE EB(off) ON CHARACTERISTICS DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 35 C CE (I = 1.0 mAdc, V = 10 Vdc) 50 C CE (I = 10 mAdc, V = 10 Vdc) 75 C CE (I = 10 mAdc, V = 10 Vdc, T = 55C) PN2222A only 35 C CE A (I = 150 mAdc, V = 10 Vdc) (Note 1) 100 300 C CE (I = 150 mAdc, V = 1.0 Vdc) (Note 1) 50 C CE (I = 500 mAdc, V = 10 Vdc) (Note 1) PN2222 30 C CE PN2222A 40 Collector Emitter Saturation Voltage (Note 1) V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) PN2222 0.4 C B PN2222A 0.3 (I = 500 mAdc, I = 50 mAdc) PN2222 1.6 C B PN2222A 1.0 Base Emitter Saturation Voltage (Note 1) V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) PN2222 1.3 C B PN2222A 0.6 1.2 (I = 500 mAdc, I = 50 mAdc) PN2222 2.6 C B PN2222A 2.0 SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f MHz T (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) PN2222 250 C CE PN2222A 300 Output Capacitance C pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) PN2222 30 EB C PN2222A 25 Input Impedance h k ie (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) PN2222A 2.0 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) PN2222A 0.25 1.25 C CE 4 Voltage Feedback Ratio h X 10 re (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) PN2222A 8.0 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) PN2222A 4.0 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) PN2222A 50 300 C CE (I = 10 mAdc, V = 10 Vdc, f = 1.0 kHz) PN2222A 75 375 C CE 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f is defined as the frequency at which h extrapolates to unity. T fe

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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