X-On Electronics has gained recognition as a prominent supplier of MMBFJ177LT1G JFET across the USA, India, Europe, Australia, and various other global locations. MMBFJ177LT1G JFET are a product manufactured by ON Semiconductor. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

MMBFJ177LT1G ON Semiconductor

MMBFJ177LT1G electronic component of ON Semiconductor
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Part No.MMBFJ177LT1G
Manufacturer: ON Semiconductor
Category: JFET
Description: SOT-23 JFETs ROHS
N-channel logic level, AEC-Q101 qualified MOSFET transistor.
Datasheet: MMBFJ177LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1407 ea
Line Total: USD 0.14 
Availability - 173259
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
46560
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1118
6000 : USD 0.1081
9000 : USD 0.1065
12000 : USD 0.1034
27000 : USD 0.1016
51000 : USD 0.0991
102000 : USD 0.0946
150000 : USD 0.0932

6683
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3904
10 : USD 0.2878
25 : USD 0.2835
100 : USD 0.1591
250 : USD 0.1576
500 : USD 0.1557
1000 : USD 0.1485
3000 : USD 0.1147
6000 : USD 0.1084

173259
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1407
10 : USD 0.1142
30 : USD 0.1009
100 : USD 0.0896
500 : USD 0.0857
1000 : USD 0.083

5808
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.42
10 : USD 0.2954
25 : USD 0.2604
100 : USD 0.2184
110 : USD 0.1568

   
Manufacturer
Product Category
Transistor Polarity
Package / Case
Packaging
Brand
Breakdown Voltage Vbr
Zero Gate Voltage Drain Current Idss Min
Zero Gate Voltage Drain Current Idss Max
Gate-Source Cutoff Voltage Vgsoff Max
Transistor Case Style
Transistor Type
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
Capacitance Ciss Max
Current Idss Max
Current Idss Min
Drain Source Voltage Vds
Operating Temperature Min
Operating Temperature Range
Power Dissipation Pd
Power Dissipation Ptot Max
Smd Marking
Termination Type
Voltage Vgs Off Min
Zero Gate Voltage Drain Current Idss
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We are delighted to provide the MMBFJ177LT1G from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBFJ177LT1G and other electronic components in the JFET category and beyond.

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The MMBFJ177LT1G is a dual N-channel enhancement mode field effect transistor manufactured by ON Semiconductor. It is designed for low to medium current, low voltage, and low power applications. The transistor has a nomimal drain-source voltage of 20V and Pd power dissipation of 250mW. It also has a low gate-source voltage and can handle a maximum current of 350mA. This part is also RoHS-compliant and meets the requirements for applications that require high resistance to ESD damage.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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