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S D SOT-23 Mark : 62T Absolute Maximum Ratings * T = 25C unless otherwise noted a Symbol Parameter Value Units V Drain-Gate Voltage -30 V DG V Gate-Source Voltage 30 V GS I Forward Gate Current 50 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ 150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. - These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol Parameter Value Units P Total Device Dissipation 225 mW D Derate above 25C 1.8 mW/C R Thermal Resistance, Junction to Ambient 556 C/W JA Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch Electrical Characteristics T = 25C unless otherwise noted C Symbol Parameter Test Condition MIN MAX Units Off Characteristics (Note3) V Gate-Source Breakdwon Voltage I = 1.0A, V = 0 30 V (BR)GSS G DS I Gate Reverse Current V = 20V, V = 0 200 pA GSS GS DS V Gate-Source Cutoff Voltage V = -15V, I = -1.0nA 1.5 4.5 V GS(off) DS D On Characteristics (Note3) I Zero-Gate Voltage Drain Current * V = -15V, V = 0 -6.0 -50 mA DSS DS GS gfs Forward Transferconductance V = 0V, V = 15V, f = 1.0kHz 8000 18000 mhos GS DS goss Common- Source Output Conduc- V = 0V, V = 15V, f = 1.0kHz 500 mhos GS DS tance Note3 : Short duration test pulse used to minimize self-heating effect. 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MMBFJ271 Rev. A