MMBF4391 / MMBF4392 / MMBF4393 N-Channel Switch
January 2015
MMBF4391 / MMBF4392 / MMBF4393
N-Channel Switch
Description
G
This device is designed for low level analog switch-
ing, sample and hold circuits and chopper stabalized
amplifiers. Sourced from process 51. See J111 for S
characteristics. Note: Source & Drain
SOT-23
D are interchangeable
Ordering Information
Part Number Top Mark Package Packing Method
MMBF4391 6J SOT-23 3L Tape and Reel
MMBF4392 6K SOT-23 3L Tape and Reel
MMBF4393 6G SOT-23 3L Tape and Reel
(1), (2)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Drain-Gate Voltage 30 V
DG
V Gate-Source Voltage -30 V
GS
I Forward Gate Current 50 mA
GF
T , T Operating and Storage Junction Temperature Range -55 to 150 C
J STG
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3 MMBF4391 / MMBF4392 / MMBF4393 N-Channel Switch
(3)
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Max. Unit
Total Device Dissipation 350 mW
P
D
Derate Above 25C2.8mW/C
R Thermal Resistance, Junction-to-Ambient 357 C/W
JA
Note:
2
3. Device mounted on FR-4 PCB 36mm 18mm 1.5mm; mounting pad for the collector lead minimum 6cm .
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V Gate-Source Breakdown Voltage I = 1.0 A, V = 0 -30 V
(BR)GSS G DS
V = -15 V, V = 0 -1.0 nA
GS DS
I Gate Reverse Current
GSS
V = -15 V, V = 0, T = 150C -0.2 A
GS DS A
MMBF4391 -4.0 -10.0
V Gate-Source Cut-Off Voltage V = 20 V, I = 1.0 nA MMBF4392 -2.0 -5.0 V
GS(off) DS D
MMBF4393 -0.5 -3.0
V Gate-Source Forward Voltage I = 1.0 mA, V = 0 1.0 V
GS(f) G DS
V = 20 V, V = -12 V MMBF4391 0.1
DS GS
V = 20 V, V = -7.0 V MMBF4392 0.1 nA
DS GS
V = 20 V, V = -5.0 V MMBF4393 0.1
DS GS
V = 20 V, V = -12 V,
DS GS
MMBF4391 0.2
I Drain Cut-Off Leakage Current
D(off) T = 150C
A
V = 20 V, V = -7.0 V,
DS GS
MMBF4392 0.2 A
T = 150C
A
V = 20 V, V = -5.0 V,
DS GS
MMBF4393 0.2
T = 150C
A
On Characteristics
MMBF4391 50 150
Zero-Gate Voltage Drain
I V = 20 V, V = 0 MMBF4392 25 75 mA
DSS (4) DS GS
Current
MMBF4393 5.0 30
I = 12 mA, V = 0 MMBF4391 0.4
D GS
V Drain-Source On Voltage I = 6.0 mA, V = 0 MMBF4392 0.4 V
DS(on) D GS
I = 3.0 mA, V = 0 MMBF4393 0.4
D GS
MMBF4391 30
r Drain-Source On Resistance I = 1.0 mA, V = 0 MMBF4392 60
DS(on) D GS
MMBF4393 100
Note:
4. Pulse test: pulse width 300 s, duty cycle 2.0%
1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4391 / MMBF4392 / MMBF4393 Rev. 1.3 2