PZT2907A PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount PZT2907A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 60 C E CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 60 C B EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C CollectorBase Cutoff Current I nAdc CBO (V = 50 Vdc, I = 0) 10 CB E CollectorEmitter Cutoff Current I nAdc CEX (V = 30 Vdc, V = 0.5 Vdc) 50 CE BE BaseEmitter Cutoff Current I nAdc BEX (V = 30 Vdc, V = 0.5 Vdc) 50 CE BE ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 75 C CE (I = 1.0 mAdc, V = 10 Vdc) 100 C CE (I = 10 mAdc, V = 10 Vdc) 100 C CE (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) 50 C CE Collector-Emitter Saturation Voltages V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 1.6 C B Base-Emitter Saturation Voltages V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 1.3 C B (I = 500 mAdc, I = 50 mAdc) 2.6 C B DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product f MHz T (I = 50 mAdc, V = 20 Vdc, f = 100 MHz) 200 C CE Output Capacitance C pF c (V = 10 Vdc, I = 0, f = 1.0 MHz) 8.0 CB E Input Capacitance C pF e (V = 2.0 Vdc, I = 0, f = 1.0 MHz) 30 EB C SWITCHING TIMES ns Turn-On Time t 45 on (V = 30 Vdc, I = 150 mAdc, CC C Delay Time t 10 d I = 15 mAdc) B1 Rise Time t 40 r ns Turn-Off Time t 100 off (V = 6.0 Vdc, I = 150 mAdc, CC C Storage Time t 80 s I = I = 15 mAdc) B1 B2 Fall Time t 30 f 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.