BF256B N-Channel RF Amplifiers
November 2014
BF256B
N-Channel RF Amplifiers
Features
This device is designed for VHF / UHF amplifiers
Sourced from process 50
TO-92
1
1. Gate 2. Source 3. Drain
Ordering Information
Part Number Top Mark Package Packing Method
BF256B BF256B TO-92 3L Bulk
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Drain-Gate Voltage 30 V
DG
V Gate-Source Voltage -30 V
GS
I Forward Gate Current 10 mA
GF
T , T Operating and Storage Temperature Range -55 to 150 C
J STG
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
Total Device Dissipation at T = 25C 350 mW
A
P
D
Derate Above 25C2.8mW/C
2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BF256B Rev. 1.1.0 BF256B N-Channel RF Amplifiers
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Max. Unit
V Gate-Source Breakdown Voltage V = 0, I = 1 A-30 V
(BR)GSS DS G
V Gate-Source Voltage V = 15 V, I = 200 A -0.5 -7.5 V
GS DS D
V (off) Gate-Source Cut-Off Voltage V = 15 V, I = 10 nA -0.5 -8.0 V
GS DS D
I Gate Reverse Current V = -20 V, V = 0 -5 nA
GSS GS DS
I Zero-Gate Voltage Drain Current V = 15 V, V = 0 6 13 mA
DSS DS GS
Common Source Forward V = 15 V, V = 0,
DS GS
gfs 4.5 mmhos
Transconductance f= 1 kHz
2003 Fairchild Semiconductor Corporation www.fairchildsemi.com
BF256B Rev. 1.1.0 2