BF256A ON Semiconductor

BF256B N-Channel RF Amplifiers November 2014 BF256B N-Channel RF Amplifiers Features This device is designed for VHF / UHF amplifiers Sourced from process 50 TO-92 1 1. Gate 2. Source 3. Drain Ordering Information Part Number Top Mark Package Packing Method BF256B BF256B TO-92 3L Bulk Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Temperature Range -55 to 150 C J STG Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit Total Device Dissipation at T = 25C 350 mW A P D Derate Above 25C2.8mW/C 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com BF256B Rev. 1.1.0 BF256B N-Channel RF Amplifiers Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit V Gate-Source Breakdown Voltage V = 0, I = 1 A-30 V (BR)GSS DS G V Gate-Source Voltage V = 15 V, I = 200 A -0.5 -7.5 V GS DS D V (off) Gate-Source Cut-Off Voltage V = 15 V, I = 10 nA -0.5 -8.0 V GS DS D I Gate Reverse Current V = -20 V, V = 0 -5 nA GSS GS DS I Zero-Gate Voltage Drain Current V = 15 V, V = 0 6 13 mA DSS DS GS Common Source Forward V = 15 V, V = 0, DS GS gfs 4.5 mmhos Transconductance f= 1 kHz 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com BF256B Rev. 1.1.0 2