BFL4004-1E ON Semiconductor

Ordering number : ENA1796A BFL4004 N-Channel Power MOSFET BFL4004 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 800 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =640V, V =0V 1.0 mA DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.0 4.0 V GS DS D Forward Transfer Admittance yfs V =20V, I =3.25A 1.7 3.4 S DS D Static Drain-to-Source On-State Resistance R (on) I =3.25A, V =10V 1.9 2.5 DS D GS Input Capacitance Ciss 710 pF Output Capacitance Coss V =30V, f=1MHz 120 pF DS Reverse Transfer Capacitance Crss 42 pF Turn-ON Delay Time t (on) 17 ns d Rise Time t 44 ns r See Fig.2 Turn-OFF Delay Time t (off) 130 ns d Fall Time t 44 ns f Total Gate Charge Qg 36 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =6.5A 6.2 nC DS GS D Gate-to-Drain Miller Charge Qgd 18 nC Diode Forward Voltage V I =6.5A, V =0V 0.85 1.2 V SD S GS Reverse Recovery Time t See Fig.3 970 ns rr Reverse Recovery Charge Q I =6.5A, V =0V, di/dt=100A/ s 6700 nC S GS rr Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V V =200V IN DD D 10V L 0V 50 I =3.25A D RG V R =59 G IN L D V OUT S PW10s D.C.1% 10V 50 V DD 0V G BFL4004 S BFL4004 P.G 50 Fig.3 Reverse Recovery Time Test Circuit D BFL4004 500H G S V =50V DD Driver MOSFET Ordering Information Device Package Shipping memo BFL4004-1E TO-220F-3FS 50pcs./tube Pb Free No. A1796-2/7