Ordering number : ENA1797A BFL4026 N-Channel Power MOSFET BFL4026 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 900 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =720V, V =0V 1.0 mA DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.0 4.0 V GS DS D Forward Transfer Admittance yfs V =20V, I =2.5A 1.4 2.8 S DS D Static Drain-to-Source On-State Resistance R (on) I =2.5A, V =10V 2.8 3.6 DS D GS Input Capacitance Ciss 650 pF Output Capacitance Coss V =30V, f=1MHz 100 pF DS Reverse Transfer Capacitance Crss 35 pF Turn-ON Delay Time t (on) 14 ns d Rise Time t 37 ns r See Fig.2 Turn-OFF Delay Time t (off) 117 ns d Fall Time t 39 ns f Total Gate Charge Qg 33 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =5A 5.3 nC DS GS D Gate-to-Drain Miller Charge Qgd 16.5 nC Diode Forward Voltage V I =5A, V =0V 0.85 1.2 V SD S GS Reverse Recovery Time t See Fig.3 720 ns rr Reverse Recovery Charge Q I =5A, V =0V, di/dt=100A/ s 4700 nC S GS rr Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =200V IN DD D 10V L 0V 50 I =2.5A D RG V R =80 G IN L D V OUT BFL4026 PW=10s S D.C.0.5% 10V 50 V DD 0V G BFL4026 P.G S R =50 GS Fig.3 Reverse Recovery Time Test Circuit D BFL4026 500H G S V =50V DD Driver MOSFET Ordering Information Device Package Shipping memo BFL4026-1E TO-220F-3FS 50pcs./magazine Pb Free No. A1797-2/7