X-On Electronics has gained recognition as a prominent supplier of BMS3003-1E MOSFETs across the USA, India, Europe, Australia, and various other global locations. BMS3003-1E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BMS3003-1E ON Semiconductor

BMS3003-1E electronic component of ON Semiconductor
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See Product Specifications
Part No.BMS3003-1E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET PCH 4V DRIVE SERIES
Datasheet: BMS3003-1E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.3471
N/A

Obsolete
0
MOQ : 163
Multiples : 1
163 : USD 2.0035
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 9.6164
10 : USD 3.323
50 : USD 3.12
100 : USD 2.7461
500 : USD 2.4896
1000 : USD 2.2866
2500 : USD 2.2118
N/A

Obsolete
0
MOQ : 32
Multiples : 72
32 : USD 2.0059
N/A

Obsolete
0
MOQ : 4
Multiples : 4
4 : USD 2.3471
N/A

Obsolete
0
MOQ : 32
Multiples : 32
32 : USD 2.0883
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BMS3003-1E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BMS3003-1E and other electronic components in the MOSFETs category and beyond.

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Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET BMS3003 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --10 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--39A 130 S DS D R (on)1 I =--39A, V =--10V 5.0 6.5 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =--39A, V =--4V 6.5 9.0 m DS D GS Input Capacitance Ciss 13200 pF Output Capacitance Coss V =--20V, f=1MHz 1300 pF DS Reverse Transfer Capacitance Crss 950 pF Turn-ON Delay Time t (on) 90 ns d Rise Time t 360 ns r See Fig.2 Turn-OFF Delay Time t(off) 1200ns d Fall Time t 680 ns f Total Gate Charge Qg 285 nC Gate to Source Charge Qgs V =--36V, V =--10V, I =--78A 35 nC DS GS D Gate to Drain Miller Charge Qgd 70 nC Diode Forward Voltage V I =--78A, V =0V --0.95 --1.5 V SD S GS Reverse Recovery Time t See Fig.3 150 ns rr Reverse Recovery Charge I =--78A, V =0V, di/dt=--100A/ s Q 470 nC rr S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V V = -36V DD IN D 0V L -10V 50 I = -39A D RG G V IN R =0.92 L D V OUT BMS3003 PW=10s D.C.1% 0V S 50 V DD -10V G BMS3003 P.G 50 S Fig.3 Reverse Recovery Time Test Circuit D BMS3003 L G V S DD Driver MOSFET Ordering Information Device Package Shipping memo BMS3003-1E TO-220F-3SG 50pcs./tube Pb Free No.A1907-2/5

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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