Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET BMS3003 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V I =--1mA, V =0V --60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--60V, V =0V --10 A DSS DS GS Gate to Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--39A 130 S DS D R (on)1 I =--39A, V =--10V 5.0 6.5 m DS D GS Static Drain to Source On-State Resistance R (on)2 I =--39A, V =--4V 6.5 9.0 m DS D GS Input Capacitance Ciss 13200 pF Output Capacitance Coss V =--20V, f=1MHz 1300 pF DS Reverse Transfer Capacitance Crss 950 pF Turn-ON Delay Time t (on) 90 ns d Rise Time t 360 ns r See Fig.2 Turn-OFF Delay Time t(off) 1200ns d Fall Time t 680 ns f Total Gate Charge Qg 285 nC Gate to Source Charge Qgs V =--36V, V =--10V, I =--78A 35 nC DS GS D Gate to Drain Miller Charge Qgd 70 nC Diode Forward Voltage V I =--78A, V =0V --0.95 --1.5 V SD S GS Reverse Recovery Time t See Fig.3 150 ns rr Reverse Recovery Charge I =--78A, V =0V, di/dt=--100A/ s Q 470 nC rr S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit V V = -36V DD IN D 0V L -10V 50 I = -39A D RG G V IN R =0.92 L D V OUT BMS3003 PW=10s D.C.1% 0V S 50 V DD -10V G BMS3003 P.G 50 S Fig.3 Reverse Recovery Time Test Circuit D BMS3003 L G V S DD Driver MOSFET Ordering Information Device Package Shipping memo BMS3003-1E TO-220F-3SG 50pcs./tube Pb Free No.A1907-2/5