X-On Electronics has gained recognition as a prominent supplier of DN3525N8-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN3525N8-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN3525N8-G Microchip

DN3525N8-G electronic component of Microchip
DN3525N8-G Microchip
DN3525N8-G MOSFETs
DN3525N8-G  Semiconductors

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See Product Specifications
Part No. DN3525N8-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 250V; 0.3A; 1.6W; SOT89-3
Datasheet: DN3525N8-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1 ea
Line Total: USD 1.1 
Availability - 124461
Ship by Thu. 30 Jan to Mon. 03 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 2000
Multiples : 2000
2000 : USD 0.7925
4000 : USD 0.7812
6000 : USD 0.7687
8000 : USD 0.7575
10000 : USD 0.7463
16000 : USD 0.735

1940
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 2000
Multiples : 2000
2000 : USD 0.8362

13580
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 2000
Multiples : 2000
2000 : USD 0.898

7538
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 59
Multiples : 1
59 : USD 1.1101
59 : USD 1.0934
60 : USD 1.0768
100 : USD 1.0602
250 : USD 1.0436
500 : USD 0.9875
1000 : USD 0.9715
3000 : USD 0.9555
6000 : USD 0.9395

124461
Ship by Thu. 30 Jan to Mon. 03 Feb
MOQ : 1
Multiples : 1
1 : USD 1.1
25 : USD 0.876
100 : USD 0.715

7538
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 59
Multiples : 1
59 : USD 1.1101
59 : USD 1.0934
60 : USD 1.0768
100 : USD 1.0602
250 : USD 1.0436
500 : USD 0.9875
1000 : USD 0.9715
3000 : USD 0.9555
6000 : USD 0.9395

5820
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 2000
Multiples : 2000
2000 : USD 1.0302
4000 : USD 1.0157
6000 : USD 0.9994
8000 : USD 0.9847
10000 : USD 0.9701

1940
Ship by Mon. 03 Feb to Fri. 07 Feb
MOQ : 2000
Multiples : 2000
2000 : USD 0.9741

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DN3525N8-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN3525N8-G and other electronic components in the MOSFETs category and beyond.

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DN3525 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The Supertex DN3525 is a low threshold depletion-mode High input impedance (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device Low on-resistance with the power handling capabilities of bipolar transistors Free from secondary breakdown and with the high input impedance and positive temperature Low input and output leakage coefcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Normally-on switches wide range of switching and amplifying applications where Solid state relays high breakdown voltage, high input impedance, low input Converters capacitance, and fast switching speeds are desired. Constant current sources Power supply circuits Telecom Ordering Information Package Option R I DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-243AA (SOT-89) () (mA) DN3525 DN3525N8-G 250 6.0 300 -G indicates package is RoHS compliant (Green) Absolute Maximum Ratings Pin Conguration Parameter Value DRAIN Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX SOURCE DRAIN Gate-to-source voltage 20V GATE Operating and storage O O TO-243AA (SOT-89) (N8) -55 C to +150 C temperature O Soldering temperature* 300 C Product Marking Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All D N 5 C W voltages are referenced to device ground. = Green Packaging Package may or may not include the following marks: Si or * Distance of 1.6mm from case for 10 seconds. TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN3525 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-243AA 360 1.0 1.6 15 78 360 1.0 Notes: I (continuous) is limited by max rated T . D J Mounted on FR5 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Symbol Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 250 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 15V, I = 1.0mA GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 15V, I = 1.0mA GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 A V = Max rating, V = -5.0V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -5.0V, T = 125 C GS A I Saturated drain-to-source current 300 - - mA V = 0V, V = 15V DSS GS DS Static drain-to-source on-state R - - 6.0 V = 0V, I = 200mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 200mA DS(ON) DS(ON) GS D G Forward transconductance 225 - - mmho V = 10V, I = 150mA FS DS D C Input capacitance - 270 350 ISS V = -5.0V, GS C Common source output capacitance - 20 60 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 5.0 20 RSS t Turn-on delay time - - 20 d(ON) V = 25V, DD t Rise time - - 25 I = 150mA, r D ns R = 25, t Turn-off delay time - - 25 GEN d(OFF) V = 0V to -10V GS t Fall time - - 40 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 150mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 150mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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