Product Information

DN2540N8-G

DN2540N8-G electronic component of Microchip

Datasheet
MOSFET N Trench 400V 170mA (Tj) 25 Ω @ 120mA,0V SOT-89 (SOT-89-3) RoHS

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0844 ea
Line Total: USD 1.08

32909 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1410 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

DN2540N8-G
Microchip

1 : USD 1.2974
10 : USD 1.2662
25 : USD 1.2351
100 : USD 1.2039
250 : USD 1.1799
500 : USD 1.1799
1000 : USD 1.1799

1940 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2000
Multiples : 2000

Stock Image

DN2540N8-G
Microchip

2000 : USD 1.079
4000 : USD 1.079

163 - WHS 3


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

DN2540N8-G
Microchip

1 : USD 2.3473
10 : USD 2.0329
30 : USD 1.8375
100 : USD 1.636
500 : USD 1.5453
1000 : USD 1.507

32802 - WHS 4


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

DN2540N8-G
Microchip

1 : USD 1.0844
25 : USD 0.9522
100 : USD 0.8671

395 - WHS 5


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

DN2540N8-G
Microchip

1 : USD 1.989
5 : USD 1.82
10 : USD 1.677
27 : USD 1.586
100 : USD 1.521

1940 - WHS 6


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 74
Multiples : 1

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DN2540N8-G
Microchip

74 : USD 1.061

5820 - WHS 7


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 500
Multiples : 500

Stock Image

DN2540N8-G
Microchip

500 : USD 1.3143

1410 - WHS 8


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 7
Multiples : 1

Stock Image

DN2540N8-G
Microchip

7 : USD 1.2974
10 : USD 1.2662
25 : USD 1.2351
100 : USD 1.2039
250 : USD 1.1799

395 - WHS 9


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 42
Multiples : 1

Stock Image

DN2540N8-G
Microchip

42 : USD 2.2044
50 : USD 2.1603

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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DN2540 Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device Low on-resistance with the power handling capabilities of bipolar transistors Free from secondary breakdown and with the high input impedance and positive temperature Low input and output leakage coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and Applications thermally-induced secondary breakdown. Normally-on switches Supertexs vertical DMOS FETs are ideally suited to a Solid state relays wide range of switching and amplifying applications where Converters high breakdown voltage, high input impedance, low input Linear amplifiers capacitance, and fast switching speeds are desired. Constant current sources Power supply circuits Telecom Product Summary Ordering Information R I DS(ON) DSS BV /BV DSX DGX Part Number Package Option Packing (max) (min) DN2540N3-G TO-92 1000/Bag 400V 25 150mA DN2540N3-G P002 DN2540N3-G P003 Pin Configuration DN2540N3-G P005 TO-92 2000/Reel DRAIN DN2540N3-G P013 DN2540N3-G P014 DRAIN DN2540N5-G TO-220 50/Tube SOURCE SOURCE DN2540N8-G TO-243AA (SOT-89) 2000/Reel GATE -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. GATE DRAIN Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. TO-92 TO-220 Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage BV SOURCE DSX DRAIN Drain-to-gate voltage BV GATE DGX TO-243AA (SOT-89) Gate-to-source voltage 20V Operating and storage O O -55 C to +150 C Typical Thermal Resistance temperature Package ja Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous O TO-92 132 C/W operation of the device at the absolute rating level may affect device reliability. All O voltages are referenced to device ground. TO-220 29 C/W O TO-243AA (SOT-89) 133 C/W Doc. DSFP-DN2540 Supertex inc. B060313 www.supertex.comDN2540 Product Marking L = Lot Number SiDN YY = Year Sealed YY = Year Sealed 2540 DN2540N5 WW = Week Sealed WW = Week Sealed LLLLLLLLL YYWW YYWW = Green Packaging = Green Packaging Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or TO-220 TO-92 W = Code for week sealed DN5DW = Green Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM (continuous) (pulsed) T = 25 C C TO-92 120mA 500mA 1.0W 120mA 500mA TO-220 500mA 500mA 15W 500mA 500mA TO-243AA 170mA 500mA 1.6W 170mA 500mA Notes: I (continuous) is limited by max rated T. D j O Mounted on FR5 board, 25mm x 25mm x 1.57mm, T = 25 C. A O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 400 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = Max rating, V = -10V DS GS I Drain-to-source leakage current D(OFF) V = 0.8 Max Rating, DS - - 1.0 mA O V = -10V, T = 125 C GS A I Saturated drain-to-source current 150 - - mA V = 0V, V = 25V DSS GS DS Static drain-to-source on-state R - 17 25 V = 0V, I = 120mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 120mA DS(ON) DS(ON) GS D G Forward transconductance - 325 - mmho V = 10V, I = 100mA FS DS D C Input capacitance - 200 300 ISS V = -10V, GS C Common source output capacitance - 12 30 pF V = 25V, OSS DS f = 1MHz C Reverse transfer capacitance - 1.0 5.0 RSS Doc. DSFP-DN2540 Supertex inc. B060313 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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