X-On Electronics has gained recognition as a prominent supplier of DN2470K4-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN2470K4-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN2470K4-G Microchip

DN2470K4-G electronic component of Microchip
DN2470K4-G Microchip
DN2470K4-G MOSFETs
DN2470K4-G  Semiconductors

Images are for reference only
See Product Specifications
Part No. DN2470K4-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 700V; 0.5A; 2.5W; TO252
Datasheet: DN2470K4-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.03 ea
Line Total: USD 1.03 
Availability - 6794
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880
Ship by Fri. 02 May to Thu. 08 May
MOQ : 500
Multiples : 500
500 : USD 0.9551
1000 : USD 0.9512
1500 : USD 0.946
2000 : USD 0.9409
4000 : USD 0.937

140
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 3.2114
10 : USD 2.0499
30 : USD 1.6451
100 : USD 1.4378
500 : USD 1.3443
1000 : USD 1.3039

6794
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.03
10 : USD 0.9888
25 : USD 0.8671
100 : USD 0.8294
2000 : USD 0.8294
4000 : USD 0.8283

1518
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 1.554
3 : USD 1.4
10 : USD 1.316

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Transistor Type
Type
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Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DN2470K4-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN2470K4-G and other electronic components in the MOSFETs category and beyond.

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DN2470 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description High-input impedance This low threshold, depletion-mode, normally-on, tran- Low-input capacitance sistor utilizes an advanced vertical Diffusion Metal Fast switching speeds Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This com- Low on-resistance bination produces a device with the power-handling Free from secondary breakdown capabilities of bipolar transistors, plus the high-input Low input and output leakage impedance and positive-temperature coefficient inher- ent in Metal-Oxide Semiconductor (MOS) devices. Applications Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced second- Normally-on switches ary breakdown. Solid state relays Converters Vertical DMOS Field-Effect Transistors (FETs) are ide- Linear amplifiers ally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high Constant current sources breakdown voltage, high input impedance, low input Battery operated systems capacitance, and fast switching speeds are desired. Telecom 2015 Microchip Technology Inc. DS20005410A-page 1DN2470 Package Type DRAIN SOURCE GATE TO-252 (D-PAK) See Table 2-1 for pin information DS20005410A-page 2 2015 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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