X-On Electronics has gained recognition as a prominent supplier of DN2470K4-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN2470K4-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN2470K4-G Microchip

DN2470K4-G electronic component of Microchip
DN2470K4-G Microchip
DN2470K4-G MOSFETs
DN2470K4-G  Semiconductors

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See Product Specifications
Part No. DN2470K4-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 700V; 0.5A; 2.5W; TO252
Datasheet: DN2470K4-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
67: USD 0.9377 ea
Line Total: USD 62.83 
Availability - 274
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ: 67  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 500
Multiples : 500
500 : USD 0.9238
1000 : USD 0.92
1500 : USD 0.915
2000 : USD 0.91
4000 : USD 0.9062

274
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 67
Multiples : 1
67 : USD 0.9377
68 : USD 0.9302
73 : USD 0.8554
100 : USD 0.8043
250 : USD 0.7947

145
Ship by Fri. 18 Apr to Wed. 23 Apr
MOQ : 1
Multiples : 1
1 : USD 2.6415
10 : USD 1.9112
30 : USD 1.522
100 : USD 1.3168
500 : USD 1.2242
1000 : USD 1.1843

7364
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 1.0506
10 : USD 1.0051
25 : USD 0.8442
100 : USD 0.8022
2000 : USD 0.8022
4000 : USD 0.8012

1518
Ship by Wed. 09 Apr to Fri. 11 Apr
MOQ : 1
Multiples : 1
1 : USD 1.554
3 : USD 1.4
10 : USD 1.288
100 : USD 1.274

274
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 67
Multiples : 1
67 : USD 0.9377
68 : USD 0.9304
73 : USD 0.8554
100 : USD 0.8043
250 : USD 0.7947

1518
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 55
Multiples : 1
55 : USD 1.6019

3880
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 500
Multiples : 500
500 : USD 1.1615
1000 : USD 1.1568
1500 : USD 1.1505
2000 : USD 1.1442
4000 : USD 1.1395

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Transistor Type
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Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DN2470K4-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN2470K4-G and other electronic components in the MOSFETs category and beyond.

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DN2470 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description High-input impedance This low threshold, depletion-mode, normally-on, tran- Low-input capacitance sistor utilizes an advanced vertical Diffusion Metal Fast switching speeds Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This com- Low on-resistance bination produces a device with the power-handling Free from secondary breakdown capabilities of bipolar transistors, plus the high-input Low input and output leakage impedance and positive-temperature coefficient inher- ent in Metal-Oxide Semiconductor (MOS) devices. Applications Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced second- Normally-on switches ary breakdown. Solid state relays Converters Vertical DMOS Field-Effect Transistors (FETs) are ide- Linear amplifiers ally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high Constant current sources breakdown voltage, high input impedance, low input Battery operated systems capacitance, and fast switching speeds are desired. Telecom 2015 Microchip Technology Inc. DS20005410A-page 1DN2470 Package Type DRAIN SOURCE GATE TO-252 (D-PAK) See Table 2-1 for pin information DS20005410A-page 2 2015 Microchip Technology Inc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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