DN2470 N-Channel, Depletion-Mode, Vertical DMOS FET Features Description High-input impedance This low threshold, depletion-mode, normally-on, tran- Low-input capacitance sistor utilizes an advanced vertical Diffusion Metal Fast switching speeds Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This com- Low on-resistance bination produces a device with the power-handling Free from secondary breakdown capabilities of bipolar transistors, plus the high-input Low input and output leakage impedance and positive-temperature coefficient inher- ent in Metal-Oxide Semiconductor (MOS) devices. Applications Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced second- Normally-on switches ary breakdown. Solid state relays Converters Vertical DMOS Field-Effect Transistors (FETs) are ide- Linear amplifiers ally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high Constant current sources breakdown voltage, high input impedance, low input Battery operated systems capacitance, and fast switching speeds are desired. Telecom 2015 Microchip Technology Inc. DS20005410A-page 1DN2470 Package Type DRAIN SOURCE GATE TO-252 (D-PAK) See Table 2-1 for pin information DS20005410A-page 2 2015 Microchip Technology Inc.