X-On Electronics has gained recognition as a prominent supplier of DN2540N3-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN2540N3-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN2540N3-G Microchip

DN2540N3-G electronic component of Microchip
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See Product Specifications
Part No.DN2540N3-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 400V; 0.15A; 1W; TO92
Datasheet: DN2540N3-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9924 ea
Line Total: USD 0.99 
Availability - 2542
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 25
Multiples : 25
25 : USD 1.0863
250 : USD 0.905
500 : USD 0.895
1000 : USD 0.8863
3000 : USD 0.8775
5000 : USD 0.8675
8000 : USD 0.86
10000 : USD 0.8512

2542
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9924
25 : USD 0.8556
100 : USD 0.7923

   
Manufacturer
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
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Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DN2540N3-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN2540N3-G and other electronic components in the MOSFETs category and beyond.

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DN2540 Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance The Supertex DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device Low on-resistance with the power handling capabilities of bipolar transistors Free from secondary breakdown and with the high input impedance and positive temperature Low input and output leakage coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and Applications thermally-induced secondary breakdown. Normally-on switches Supertexs vertical DMOS FETs are ideally suited to a Solid state relays wide range of switching and amplifying applications where Converters high breakdown voltage, high input impedance, low input Linear amplifiers capacitance, and fast switching speeds are desired. Constant current sources Power supply circuits Telecom Product Summary Ordering Information R I DS(ON) DSS BV /BV DSX DGX Part Number Package Option Packing (max) (min) DN2540N3-G TO-92 1000/Bag 400V 25 150mA DN2540N3-G P002 DN2540N3-G P003 Pin Configuration DN2540N3-G P005 TO-92 2000/Reel DRAIN DN2540N3-G P013 DN2540N3-G P014 DRAIN DN2540N5-G TO-220 50/Tube SOURCE SOURCE DN2540N8-G TO-243AA (SOT-89) 2000/Reel GATE -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. GATE DRAIN Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. TO-92 TO-220 Absolute Maximum Ratings DRAIN Parameter Value Drain-to-source voltage BV SOURCE DSX DRAIN Drain-to-gate voltage BV GATE DGX TO-243AA (SOT-89) Gate-to-source voltage 20V Operating and storage O O -55 C to +150 C Typical Thermal Resistance temperature Package ja Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous O TO-92 132 C/W operation of the device at the absolute rating level may affect device reliability. All O voltages are referenced to device ground. TO-220 29 C/W O TO-243AA (SOT-89) 133 C/W Doc. DSFP-DN2540 Supertex inc. B060313 www.supertex.comDN2540 Product Marking L = Lot Number SiDN YY = Year Sealed YY = Year Sealed 2540 DN2540N5 WW = Week Sealed WW = Week Sealed LLLLLLLLL YYWW YYWW = Green Packaging = Green Packaging Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or TO-220 TO-92 W = Code for week sealed DN5DW = Green Packaging Package may or may not include the following marks: Si or TO-243AA (SOT-89) Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM (continuous) (pulsed) T = 25 C C TO-92 120mA 500mA 1.0W 120mA 500mA TO-220 500mA 500mA 15W 500mA 500mA TO-243AA 170mA 500mA 1.6W 170mA 500mA Notes: I (continuous) is limited by max rated T. D j O Mounted on FR5 board, 25mm x 25mm x 1.57mm, T = 25 C. A O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 400 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = Max rating, V = -10V DS GS I Drain-to-source leakage current D(OFF) V = 0.8 Max Rating, DS - - 1.0 mA O V = -10V, T = 125 C GS A I Saturated drain-to-source current 150 - - mA V = 0V, V = 25V DSS GS DS Static drain-to-source on-state R - 17 25 V = 0V, I = 120mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 120mA DS(ON) DS(ON) GS D G Forward transconductance - 325 - mmho V = 10V, I = 100mA FS DS D C Input capacitance - 200 300 ISS V = -10V, GS C Common source output capacitance - 12 30 pF V = 25V, OSS DS f = 1MHz C Reverse transfer capacitance - 1.0 5.0 RSS Doc. DSFP-DN2540 Supertex inc. B060313 2 www.supertex.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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