DMP2008UFG 20V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Low R ensures on state losses are minimized I max DS(ON) D V R max (BR)DSS DS(ON) T = +25C Small form factor thermally efficient package enables higher A density end products 8m V = -4.5V -14A GS Occupies just 33% of the board area occupied by SO-8 enabling 9.8m V = -2.5V -10A GS -20V smaller end product -9.3A 13m V = -1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -8.3A 17m V = -1.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: POWERDI3333-8 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Load Switch Terminals: Finish Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) Drain POWERDI3333-8 Pin 1 S S S G Gate D D D Source D Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP2008UFG-7 POWERDI3333-8 2000/Tape & Reel DMP2008UFG-13 POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2008UFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -20 V V DSS Gate-Source Voltage (Note 5) 8 V V GSS T = +25C A -14 Steady Continuous Drain Current (Note 6) V = -4.5V T = +70C I -11 A GS A D State -54 T = +25C C Pulsed Drain Current (10s pulse, duty cycle = 1%) -80 A I DM Maximum Continuous Body Diode Forward Current (Note 6) -2.2 A I S Avalanche Current (Note 8) I -15 A AS Avalanche Energy (Note 8) E -113 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 2.4 T = +25C A Total Power Dissipation (Note 6) P W D 41 T = +25C C (Note 5) 52 Thermal Resistance, Junction to Ambient R JA (Note 6) 137 C/W Thermal Resistance, Junction to Case (Note 6) 3.0 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage -20 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V -0.4 -1.0 V V = V , I = -250A GS(th) DS GS D 8 V = -4.5V, I = -12A GS D 9.8 V = -2.5V, I = -10A GS D Static Drain-Source On-Resistance m R DS (ON) 13 V = -1.8V, I = -9.3A GS D 17 V = -1.5V, I = -8.3A GS D Forward Transfer Admittance 42 S Y V = -5V, I = -12A fs DS D DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 6909 C iss V = -10V, V = 0V DS GS Output Capacitance 635 pF C oss f = 1.0MHz Reverse Transfer Capacitance 563 C rss Gate Resistance 2.5 R V = 0V, V = 0V, f = 1.0MHz G DS GS 72 Total Gate Charge (V = -4.5V) Q GS g 40 Total Gate Charge (V = -2.5V) Q GS g nC V = -10V, I = -12A DD D 8.6 Gate-Source Charge Q gs 14.5 Gate-Drain Charge Q gd 22 Turn-On Delay Time t D(on) 33 Turn-On Rise Time tr V = -4.5V, V = -10V, GS DD ns 291 Turn-Off Delay Time R = 6, I = -12A t G D D(off) Turn-Off Fall Time 124 t f BODY DIODE CHARACTERISTICS -0.7 V V = 0V, I = -12A GS S Diode Forward Voltage V SD -0.7 V V = 0V, I = -2A GS S Reverse Recovery Time (Note 10) 25 ns t I = -12A, di/dt = 100A/s rr F Reverse Recovery Charge (Note 10) 15 nC Q I = -12A, di/dt = 100A/s rr F Notes: 5. AEC-Q101 V maximum is 6.4V. GS 6. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 8 .UIS in production with L = 1mH, T = +25C. J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 6 August 2014 DMP2008UFG Diodes Incorporated www.diodes.com Document number: DS35694 Rev. 14 - 2 ADVANCE INFORMATION ADVANCE INFORMATION