DMT5015LFDF 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications I Max D V R Max (BR)DSS DS(ON) 2 T = +25C PCB Footprint of 4mm A 9.1A 15m V = 10V Low Gate Threshold Voltage GS 50V 7.4A 23m V = 4.5V GS Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: U-DFN2020-6 (Type F) (R ), yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminals: Finish NiPdAu over Copper Leadframe. e4 Adaptor Switch Solderable per MIL-STD-202, Method 208 Notebook PC Weight: 0.007 grams (Approximate) U-DFN2020-6 D (Type F) G S Pin Out Top View Bottom View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Marking Reel Size (inches) Quantity per Reel DMT5015LFDF-7 T5 7 3,000 DMT5015LFDF-13 T5 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT5015LFDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 50 V DSS Gate-Source Voltage 16 V V GSS Steady T = +25C 9.1 A A I D State 7.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 11.5 A t<10s I A D 9.2 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 60 A I DM Continuous Source-Drain Diode Current 2.2 A T = +25C A I S Avalanche Current (Note 7) L = 0.1mH 14.4 A I AS Avalanche Energy (Note 7) L = 0.1mH 10.4 mJ E AS Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.82 A Total Power Dissipation (Note 5) W P D T = +70C 0.52 A Steady State 153 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 96 1.97 TA = +25C Total Power Dissipation (Note 6) P W D 1.2 T = +70C A Steady State 67 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 42 C/W Thermal Resistance, Junction to Case (Note 6) Steady State 14 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 40V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.5 2.0 V V = V , I = 250A GS(TH) DS GS D 10.5 15 V = 10V, I = 8A GS D Static Drain-Source On-Resistance R m DS(ON) 14 23 VGS = 4.5V, ID = 6A Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 902.7 ISS V = 25V, V = 0V, DS GS Output Capacitance pF C 301.4 OSS f = 1.0MHz Reverse Transfer Capacitance C 15.2 RSS 1.9 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 6.1 Total Gate Charge (V = 4.5V) Q GS G 14 Total Gate Charge (V = 10V) Q GS G nC V = 25V, I = 8A DS D 2.4 Gate-Source Charge Q GS 1.6 Gate-Drain Charge Q GD 2.8 Turn-On Delay Time tD(ON) Turn-On Rise Time 5.1 t V = 25V, V = 10V, R DS GS ns Turn-Off Delay Time 10.6 R = 3, I = 8A t G D D(OFF) Turn-Off Fall Time 2.7 t F Reverse Recovery Time 18.9 ns t I = 8A, di/dt = 100A/s RR F Reverse Recovery Charge Q - 9.2 nC I = 8A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 July 2016 DMT5015LFDF www.diodes.com Diodes Incorporated Datasheet number: DS37202 Rev. 5 - 2 ADVANCED INFORMATION