X-On Electronics has gained recognition as a prominent supplier of DMT5015LFDF-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT5015LFDF-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMT5015LFDF-7 Diodes Incorporated

DMT5015LFDF-7 electronic component of Diodes Incorporated
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Part No.DMT5015LFDF-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A
Datasheet: DMT5015LFDF-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
449: USD 0.2896 ea
Line Total: USD 130.03 
Availability - 9580
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 449  Multiples: 1
Pack Size: 1
Availability Price Quantity
9580
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 449
Multiples : 1
449 : USD 0.2896
500 : USD 0.2688
1000 : USD 0.2432
3000 : USD 0.2174
9000 : USD 0.2097

9580
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 36
Multiples : 1
36 : USD 0.7628
100 : USD 0.5682
500 : USD 0.4515
1000 : USD 0.3478
3000 : USD 0.3152
9000 : USD 0.2842

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the DMT5015LFDF-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT5015LFDF-7 and other electronic components in the MOSFETs category and beyond.

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DMT5015LFDF 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications I Max D V R Max (BR)DSS DS(ON) 2 T = +25C PCB Footprint of 4mm A 9.1A 15m V = 10V Low Gate Threshold Voltage GS 50V 7.4A 23m V = 4.5V GS Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: U-DFN2020-6 (Type F) (R ), yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminals: Finish NiPdAu over Copper Leadframe. e4 Adaptor Switch Solderable per MIL-STD-202, Method 208 Notebook PC Weight: 0.007 grams (Approximate) U-DFN2020-6 D (Type F) G S Pin Out Top View Bottom View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Marking Reel Size (inches) Quantity per Reel DMT5015LFDF-7 T5 7 3,000 DMT5015LFDF-13 T5 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT5015LFDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 50 V DSS Gate-Source Voltage 16 V V GSS Steady T = +25C 9.1 A A I D State 7.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 11.5 A t<10s I A D 9.2 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 60 A I DM Continuous Source-Drain Diode Current 2.2 A T = +25C A I S Avalanche Current (Note 7) L = 0.1mH 14.4 A I AS Avalanche Energy (Note 7) L = 0.1mH 10.4 mJ E AS Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.82 A Total Power Dissipation (Note 5) W P D T = +70C 0.52 A Steady State 153 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 96 1.97 TA = +25C Total Power Dissipation (Note 6) P W D 1.2 T = +70C A Steady State 67 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 42 C/W Thermal Resistance, Junction to Case (Note 6) Steady State 14 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 40V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.5 2.0 V V = V , I = 250A GS(TH) DS GS D 10.5 15 V = 10V, I = 8A GS D Static Drain-Source On-Resistance R m DS(ON) 14 23 VGS = 4.5V, ID = 6A Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 902.7 ISS V = 25V, V = 0V, DS GS Output Capacitance pF C 301.4 OSS f = 1.0MHz Reverse Transfer Capacitance C 15.2 RSS 1.9 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 6.1 Total Gate Charge (V = 4.5V) Q GS G 14 Total Gate Charge (V = 10V) Q GS G nC V = 25V, I = 8A DS D 2.4 Gate-Source Charge Q GS 1.6 Gate-Drain Charge Q GD 2.8 Turn-On Delay Time tD(ON) Turn-On Rise Time 5.1 t V = 25V, V = 10V, R DS GS ns Turn-Off Delay Time 10.6 R = 3, I = 8A t G D D(OFF) Turn-Off Fall Time 2.7 t F Reverse Recovery Time 18.9 ns t I = 8A, di/dt = 100A/s RR F Reverse Recovery Charge Q - 9.2 nC I = 8A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 July 2016 DMT5015LFDF www.diodes.com Diodes Incorporated Datasheet number: DS37202 Rev. 5 - 2 ADVANCED INFORMATION

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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