DMN2011UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low Profile Applications I D max V R (BR)DSS DS(ON) max T = +25C 2 A PCB Footprint of 4mm 9.5m V = 4.5V 11.7A GS Low Gate Threshold Voltage 20V 11m V = 2.5V 10.8A GS Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET is designed to minimize the on-state Qualified to AEC-Q101 Standards for High Reliability resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high efficiency power management applications. Mechanical Data Case: U-DFN2020-6 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 General Purpose Interfacing Switch Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish NiPdAu over Copper Leadframe. Solderable e4 per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) D U-DFN2020-6 Pin1 G Gate Protection ESD PROTECTED S Diode Bottom View Bottom View Pin Out Equivalent Circuit Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per reel DMN2011UFDE-7 N3 7 3,000 DMN2011UFDE-13 N3 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2011UFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = +25C Steady A 11.7 I A D State 9.3 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 14.2 A t<10s A I D 11.4 T = +70C A T = +25C Steady A 10.8 I A D State 8.7 T = +70C A Continuous Drain Current (Note 6) V = 2.5V GS T = +25C 13.2 A t<10s I A D 10.6 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 80 A DM Maximum Body Diode Continuous Current I 2.5 A S Avalanche Current (Note 7) L = 0.1mH I 18 A AS Avalanche Energy (Note 7) L = 0.1mH E 17 mJ AS Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.61 A Total Power Dissipation (Note 5) W P D T = +70C 0.39 A Steady state 209 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 142 T = +25C 1.97 A Total Power Dissipation (Note 6) W P D T = +70C 1.27 A Steady state 64 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 6) R 9.8 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG 2 of 7 September 2014 DMN2011UFDE www.diodes.com Diodes Incorporated Datasheet number: DS36376 Rev. 4 - 2 ADVANCE INFORMATION ADVANCED INFORMATION