DN3145 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance The Supertex DN3145 is a depletion-mode (normally-on) Low input capacitance transistor utilizing an advanced vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. Fast switching speeds This combination produces a device with the power handling Low on-resistance capabilities of bipolar transistors and with the high input Free from secondary breakdown impedance and positive temperature coefcient inherent Low input and output leakage in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Normally-on switches Supertexs vertical DMOS FETs are ideally suited to a Solid state relays wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input Converters capacitance, and fast switching speeds are desired. Constant current sources Power supply circuits Telecom Ordering Information Package Option R I DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-243AA (SOT-89) () (mA) DN3145 DN3145N8-G 450 60 120 -G indicates package is RoHS compliant (Green) Absolute Maximum Ratings Pin Conguration Parameter Value DRAIN Drain-to-source voltage BV DSX Drain-to-gate voltage BV SOURCE DGX DRAIN Gate-to-source voltage 20V GATE Operating and storage TO-243AA (SOT-89) (N8) O O -55 C to +150 C temperature O Soldering temperature* 300 C Product Marking Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All D N 1 M W voltages are referenced to device ground. = Green Packaging * Distance of 1.6mm from case for 10 seconds. TO-243AA (SOT-89) (N8) 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN3145 Thermal Characteristics Power Dissipation I I I I D D jc ja DR DRM Package (continuous) (pulsed) O T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-243AA 100 300 1.3 34 97 100 300 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 450 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 15V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 15V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 A V = Max rating, V = -5.0V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -5.0V, T = 125 C GS A I Saturated drain-to-source current 120 - - mA V = 0V, V = 15V DSS GS DS Static drain-to-source on-state R - - 60 V = 0V, I = 100mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 100mA DS(ON) DS(ON) GS D G Forward transconductance 140 - - mmho V = 10V, I = 100mA FS DS D C Input capacitance - - 120 ISS V = -5.0V, GS C Common source output capacitance - - 15 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 10 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 15 r ns I = 100mA, D t Turn-off delay time - - 20 d(OFF) R = 25, GEN t Fall time - - 35 f V Diode forward voltage drop - - 1.8 V V = -5.0V, I = 100mA SD GS SD t Reverse recovery time - 800 - ns V = -5.0V, I = 100mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2