X-On Electronics has gained recognition as a prominent supplier of DN2530N8-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. DN2530N8-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DN2530N8-G Microchip

Hot DN2530N8-G electronic component of Microchip
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See Product Specifications
Part No.DN2530N8-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 300V; 0.2A; 740mW; SOT89-3
Datasheet: DN2530N8-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.702 ea
Line Total: USD 0.7 
Availability - 1
Ship by Mon. 04 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7760
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.7925
4000 : USD 0.785
6000 : USD 0.7775
8000 : USD 0.7688
10000 : USD 0.7613
16000 : USD 0.7537

4137
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9154
25 : USD 0.7808
100 : USD 0.7325

235
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.218
5 : USD 1.19
18 : USD 1.022
25 : USD 0.966
100 : USD 0.938

7760
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 1.0715
4000 : USD 1.0613
6000 : USD 1.0512
8000 : USD 1.0393
10000 : USD 1.0292

1455
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 9
Multiples : 1
9 : USD 0.9335

284
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 76
Multiples : 1
76 : USD 1.3838

1
Ship by Mon. 04 Nov
MOQ : 1
Multiples : 1
1 : USD 0.702
100 : USD 0.5791
500 : USD 0.5356
1000 : USD 0.518

   
Manufacturer
Product Category
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Type Of Transistor
Drain-Source Voltage
On-State Resistance
Gate-Source Voltage
Pulsed Drain Current
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DN2530N8-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DN2530N8-G and other electronic components in the MOSFETs category and beyond.

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DN2530 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description The DN2530 is a low threshold depletion-mode (normally-on) High input impedance transistor utilizing an advanced vertical DMOS structure and Low input capacitance Supertexs well-proven silicon-gate manufacturing process. Fast switching speeds This combination produces a device with the power handling Low on-resistance capabilities of bipolar transistors and with the high input Free from secondary breakdown impedance and positive temperature coefcient inherent Low input and output leakage in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a Normally-on switches wide range of switching and amplifying applications where Solid state relays high breakdown voltage, high input impedance, low input Converters capacitance, and fast switching speeds are desired. Linear ampliers Constant current sources Power supply circuits Telecom Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-243AA(SOT-89) TO-92 () (mA) DN2530 DN2530N8-G DN2530N3-G 300 12 200 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN SOURCE SOURCE DRAIN DRAIN Absolute Maximum Ratings GATE GATE Parameter Value TO-92 (N3) TO-243AA (SOT-89) (N8) Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX Product Marking Gate-to-source voltage 20V D N YY = Year Sealed Operating and storage O O -55 C to +150 C 2 5 3 0 WW = Week Sealed temperature = Green Packaging Y Y W W O Soldering temperature* 300 C TO-92 (N3) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous W = Code for week sealed operation of the device at the absolute rating level may affect device reliability. All D N 5 T W voltages are referenced to device ground. = Green Packaging TO-243AA (SOT-89) (N8) * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comDN2530 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM Package O (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-243AA 200 500 1.6 15 78 200 500 TO-92 175 500 0.74 125 170 175 500 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm. O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 300 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.0 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = Max rating, V = -10V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -10V, T = 125 C GS A I Saturated drain-to-source current 200 - - mA V = 0V, V = 25V DSS GS DS Static drain-to-source on-state R - - 12 V = 0V, I = 150mA DS(ON) GS D resistance O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 150mA DS(ON) DS(ON) GS D G Forward transconductance 300 - - mmho V = 10V, I = 150mA FS DS D C Input capacitance - - 300 ISS V = -10V, GS C Common source output capacitance - - 30 pF V = 25V, OSS DS f = 1MHz C Reverse transfer capacitance - - 5 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 15 r ns I = 150mA, D t Turn-off delay time - - 15 d(OFF) R = 25, GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = -10V, I = 150mA SD GS SD t Reverse recovery time - 600 - ns V = -10V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R INPUT L PULS E GENERATOR 10% -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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