Supertex inc. DN2535 N-Channel Depletion-Mode Vertical DMOS FETs Features General Description High input impedance The Supertex DN2535 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical Low input capacitance DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device Low on-resistance with the power handling capabilities of bipolar transistors Free from secondary breakdown and with the high input impedance and positive temperature Low input and output leakage coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and Applications thermally-induced secondary breakdown. Normally-on switches Solid state relays Supertexs vertical DMOS FETs are ideally suited to a Converters wide range of switching and amplifying applications where Linear amplifiers high breakdown voltage, high input impedance, low input Constant current sources capacitance, and fast switching speeds are desired. Power supply circuits Telecom Ordering Information Product Summary R I Part Number Package Option Packing DS(ON) DSS BV /BV DSX DGX (max) (min) DN2535N3-G TO-92 1000/Bag 350V 25 150mA DN2535N3-G P002 DN2535N3-G P003 Pin Configuration DN2535N3-G P005 TO-92 2000/Reel DRAIN DN2535N3-G P013 DN2535N3-G P014 DN2535N5-G TO-220 50/Tube DRAIN -G denotes a lead (Pb)-free / RoHS compliant package. SOURCE SOURCE Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. GATE DRAIN Absolute Maximum Ratings GATE 3-Lead TO-92 3-Lead TO-220 Parameter Value Drain-to-source voltage BV DSX Product Marking Drain-to-gate voltage BV DGX SiDN YY = Year Sealed 2535 WW = Week Sealed Gate-to-source voltage 20V = Green Packaging YYWW Operating and storage O O -55 C to +150 C Package may or may not include the following marks: Si or temperature 3-Lead TO-92 Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All L = Lot Number voltages are referenced to device ground. YY = Year Sealed DN2535N5 WW = Week Sealed LLLLLLLLL YYWW = Green Packaging Typical Thermal Resistance Package may or may not include the following marks: Si or Package ja O 3-Lead TO-220 TO-92 132 C/W O TO-220 29 C/W Doc. DSFP-DN2535 Supertex inc. B062813 www.supertex.comDN2535 Thermal Characteristics I I Power Dissipation D D Package I I O DR DRM (continuous) (pulsed) T = 25 C C TO-92 120mA 500mA 1.0W 120mA 500mA TO-220 500mA 500mA 15W 500mA 500mA Notes: I (continuous) is limited by max rated T. D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 350 - - V V = -5.0V, I = 100A DSX GS D V Gate-to-source off voltage -1.5 - -3.5 V V = 25V, I = 10A GS(OFF) DS D O V Change in V with temperature - - -4.5 mV/ C V = 25V, I = 10A GS(OFF) GS(OFF) DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = Max rating, V = -10V DS GS I Drain-to-source leakage current V = 0.8 Max Rating, D(OFF) DS - - 1.0 mA O V = -10V, T = 125 C GS A I Saturated drain-to-source current 150 - - mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 17 25 V = 0V, I = 120mA DS(ON) GS D O R Change in R with temperature - - 1.1 %/ C V = 0V, I = 120mA DS(ON) DS(ON) GS D G Forward transconductance - 325 - mmho V = 10V, I = 100mA FS DS D C Input capacitance - 200 300 ISS V = -10V, GS C Common source output capacitance - 12 30 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 1.0 5.0 RSS t Turn-on delay time - - 10 d(ON) V = 25V, DD t Rise time - - 15 r ns I = 150mA, D t Turn-off delay time - - 15 d(OFF) R = 25, GEN t Fall time - - 20 f V Diode forward voltage drop - - 1.8 V V = -10V, I = 120mA SD GS SD t Reverse recovery time - 800 - ns V = -10V, I = 1.0A rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V VDD 90% INPUT Pulse R L 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(OFF) f d(ON) r VDD INPUT D.U.T. 10% 10% OUTPUT 90% 90% 0V Doc. DSFP-DN2535 Supertex inc. B062813 2 www.supertex.com