AO4354 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.2 1.8 2.2 V GS(th) DS GS, D V =10V, I =20A 3 3.7 GS D m R Static Drain-Source On-Resistance T =125C 4.1 5 DS(ON) J V =4.5V, I =20A 4.1 5.3 m GS D V =5V, I =20A g Forward Transconductance 105 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 4 A S DYNAMIC PARAMETERS C Input Capacitance 2010 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 898 pF oss GS DS C Reverse Transfer Capacitance 124 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.9 1.8 2.7 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 36 49 nC g Q (4.5V) Total Gate Charge 17 23 nC g V =10V, V =15V, I =20A GS DS D Q Gate Source Charge 6 nC gs Q Gate Drain Charge 8 nC gd t Turn-On DelayTime 7.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =0.75, 4.0 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 3377..00 nnss D(off) GEN t Turn-Off Fall Time 7.5 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 14 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 20.3 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedance from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: April 2012 www.aosmd.com Page 2 of 5