AO4421 60V P-Channel MOSFET General Description Product Summary V The AO4421 combines advanced trench MOSFET DS -60V technology with a low resistance package to provide I (at V =-10V) -6.2A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =-10V) < 40m DS(ON) GS and battery protection applications. R (at V = -4.5V) < 50m DS(ON) GS 100% UIS Tested 100% R Tested g SO8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -60 V DS Gate-Source Voltage V 20 V GS T =25C Continuous Drain -6.2 A A T =70C I Current -5 A A D B Pulsed Drain Current I -40 DM T =25C 3.1 A P W D A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 24 40 C/W R A JA Maximum Junction-to-Ambient Steady-State 54 75 C/W C Steady-State R Maximum Junction-to-Lead 21 30 C/W JL Rev 3: Nov 2010 www.aosmd.com Page 1 of 4 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -60 V DSS D GS V =-48V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V =20V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =-250A -1 -2 -3 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -40 A D(ON) GS DS V =-10V, I =-6.2A 32 40 GS D m R Static Drain-Source On-Resistance T =125C 53 70 DS(ON) J V =-4.5V, I =-5A 40 50 m GS D g Forward Transconductance V =-5V, I =-6.2A 18 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.74 -1 V SD S GS I Maximum Body-Diode Continuous Current -4.2 A S DYNAMIC PARAMETERS C Input Capacitance 2417 2900 pF iss C Output Capacitance V =0V, V =-30V, f=1MHz 179 pF GS DS oss C Reverse Transfer Capacitance 120 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.9 2.3 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge (10V) 46.5 55 nC g Q (4.5V) Total Gate Charge (4.5V) 22.7 nC g V =-10V, V =-30V, I =-6.2A GS DS D Q Gate Source Charge 9.1 nC gs Q Gate Drain Charge 9.2 nC gd t Turn-On DelayTime 9.8 ns D(on) t Turn-On Rise Time V =-10V, V =-30V, R =4.7, 6.1 ns r GS DS L R =3 t Turn-Off DelayTime 44 ns GEN D(off) t Turn-Off Fall Time 12.7 ns f t I =-6.2A, dI/dt=100A/s 34 42 rr Body Diode Reverse Recovery Time F ns Q I =-6.2A, dI/dt=100A/s 47 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. JA A The value in any a given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The A SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Rev 3: Nov 2010 www.aosmd.com Page 2 of 4