AO4442
75V N-Channel MOSFET
General Description Product Summary
V 75V
The AO4442 uses advanced trench technology to DS
provide excellent R , low gate charge and
I (at V =10V) 3.1A
DS(ON)
D GS
operation with gate voltages from 4.5V to 25V. This
R (at V =10V) < 130m
DS(ON) GS
device is suitable for use as a load switch or in PWM
R (at V = 4.5V) < 165m
DS(ON) GS
applications.
SOIC-8
D
Top View Bottom View
D
D
D
D
G
G
S
S
S
S
Absolute Maximum Ratings T =25C unless otherwise noted
A
Parameter Symbol Maximum Units
Drain-Source Voltage V 75 V
DS
Gate-Source Voltage V 25 V
GS
T =25C 3.1
A
Continuous Drain
I
D
T =70C A
Current 2.5
A
C
Pulsed Drain Current I 20
DM
T =25C 3.1
A
P W
D
B
Power Dissipation T =70C 2
A
Junction and Storage Temperature Range T , T -55 to 150 C
J STG
Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t 10s
31 40 C/W
R
A D JA
Maximum Junction-to-Ambient Steady-State
59 75 C/W
Maximum Junction-to-Lead Steady-State R 16 24 C/W
JL
Rev 2: June 2011 www.aosmd.com Page 1 of 5 AO4442
Electrical Characteristics (T =25C unless otherwise noted)
J
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BV Drain-Source Breakdown Voltage I =10mA, V =0V 75 V
DSS D GS
V =60V, V =0V 1
DS GS
I
Zero Gate Voltage Drain Current A
DSS
T =55C 5
J
I Gate-Body leakage current V =0V, V = 25V 100 nA
DS GS
GSS
V Gate Threshold Voltage V =V , I =250A 1 2.4 3 V
GS(th) DS GS D
I On state drain current V =10V, V =5V 20 A
D(ON) GS DS
V =10V, I =3.1A 100 130
GS D
m
R
Static Drain-Source On-Resistance T =125C 180 220
DS(ON) J
V =4.5V, I =2A 120 165 m
GS D
g Forward Transconductance V =5V, I =3.1A 8.2 S
DS D
FS
V Diode Forward Voltage I =1A,V =0V 0.79 1 V
SD S GS
I Maximum Body-Diode Continuous Current 3.5 A
S
DYNAMIC PARAMETERS
C Input Capacitance 303 350 pF
iss
V =0V, V =37.5V, f=1MHz
C Output Capacitance 37 pF
GS DS
oss
C Reverse Transfer Capacitance 17 pF
rss
R Gate resistance V =0V, V =0V, f=1MHz 2.2 3
g GS DS
SWITCHING PARAMETERS
Q (10V) Total Gate Charge 5.2 6.5 nC
g
Q (4.5V) Total Gate Charge 2.46 3.5 nC
g
V =10V, V =37.5V, I =3.1A
GS DS D
Q Gate Source Charge 1 nC
gs
Q Gate Drain Charge 1.34 nC
gd
t Turn-On DelayTime 4.5 ns
D(on)
t Turn-On Rise Time V =10V, V =37.5V, R =12, 2.3 ns
r GS DS L
R =3
t Turn-Off DelayTime 15.6 ns
GEN
D(off)
t Turn-Off Fall Time 1.9 ns
f
t I =3.1A, dI/dt=100A/s
rr Body Diode Reverse Recovery Time F 22 30 ns
Q I =3.1A, dI/dt=100A/s
nC
rr Body Diode Reverse Recovery Charge F 22
2
A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The
JA A
value in any given application depends on the user's specific board design.
B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance.
D J(MAX)
C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
initialT =25C.
J
D. The R is the sum of the thermal impedance from junction to lead R and lead to ambient.
JA JL
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
2
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g.
J(MAX)
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: June 2011 www.aosmd.com Page 2 of 5