AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3422 uses advanced trench technology to V (V) = 55V DS provide excellent R and low gate charge. It offers DS(ON) I = 2.1A (V = 4.5V) D GS operation over a wide gate drive range from 2.5V to R < 160m (V = 4.5V) DS(ON) GS 12V. This device is suitable for use as a load switch. R < 200m (V = 2.5V) DS(ON) GS SOT23 D Top View Bottom View D D G G S S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 55 V DS V Gate-Source Voltage 12 V GS Continuous Drain T =25C 2.1 A A Current T =70C I 1.7 A A D B Pulsed Drain Current I 10 DM T =25C 1.25 A P W D Power Dissipation T =70C 0.8 A T , T Junction and Storage Temperature Range -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 75 100 C/W R JA A Steady-State Maximum Junction-to-Ambient 115 150 C/W C R Steady-State 48 60 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd.AO3422 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =10mA, V =0V 55 V DSS D GS V =44V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Source leakage current V =0V, V =12V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 0.6 1.3 2 V GS(th) DS GS D I On state drain current V =4.5V, V =5V 10 A D(ON) GS DS V =4.5V, I =2.1A 125 160 GS D m R Static Drain-Source On-Resistance T =125C 175 210 DS(ON) J m V =2.5V, I =1.5A 157 200 GS D g Forward Transconductance V =5V, I =2.1A 11 S FS DS D V Diode Forward Voltage I =1A 0.78 1 V SD S I Maximum Body-Diode Continuous Current 1A S DYNAMIC PARAMETERS C Input Capacitance 214 300 pF iss C V =0V, V =25V, f=1MHz Output Capacitance 31 pF oss GS DS C Reverse Transfer Capacitance 12.6 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.3 3 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 2.6 3.3 nC g Q V =4.5V, V =27.5V, I =2.1A Gate Source Charge 0.6 nC gs GS DS D Q Gate Drain Charge 0.8 nC gd t Turn-On DelayTime 2.3 ns D(on) t Turn-On Rise Time V =10V, V =27.5V, R =12, 2.4 ns r GS DS L t R =3 Turn-Off DelayTime 16.5 ns D(off) GEN t Turn-Off Fall Time 2ns f t I =2.1A, dI/dt=100A/s 20 30 rr Body Diode Reverse Recovery Time F ns I =2.1A, dI/dt=100A/s Q 17 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev2: Sep 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd.