Product Technical OrOrdderer Folder Support NowNow InterFET IF9030 IF9030 N-Channel JFET Features TO-52 Bottom View InterFET N0903L Geometry Gate/Case 3 Low Noise: 0.7 nV/Hz Typical High Gain: 150mS Typical Drain 2 Low Rds(on): 6.0 Ohms Typical RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications Low-Noise, High Gain Amplifiers Description The -20V InterFET IF9030 JFET is targeted for low noise high gain amplifier designs. The IF9030 has a cutoff voltage of less than 2.0V ideal for low voltage applications. The TO-52 package is hermetically sealed and suitable for military applications. Product Summary Parameters IF9030 Min Unit BVGSS Gate to Source Breakdown Voltage -20 V IDSS Drain to Source Saturation Current 30 mA V Gate to Source Cutoff Voltage -0.35 V GS(off) G Forward Transconductance 80 mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IF9030T52 Through-Hole TO-52 Bulk IF9030COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IF9030CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35074.R01Product Technical OrOrdderer Folder Support NowNow InterFET IF9030 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.4 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -20 V Breakdown Voltage Gate to Source IGSS VGS = -10V, VDS = 0V -0.1 nA Reverse Current Gate to Source VGS(OFF) VDS = 10V, ID = 0.5nA -0.35 -2.0 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 30 100 300 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Forward G V = 10V, V = 0V, f = 1kHz 80 150 mS FS DS GS Transconductance C Input Capacitance V = 10V, I = 5mA, f = 1MHz 60 pF iss DS D Reverse Transfer C V = 10V, I = 5mA, f = 1MHz 20 pF rss DS D Capacitance Equivalent Circuit V = 4V, I = 5mA, f = 1kHz 0.7 DS D nV/ Hz e n Input Noise Voltage IF9030 2 of 5 InterFET Corporation Document Number: IF35074.R01 www.InterFET.com November, 2019