BF721T1G PNP Silicon Transistor Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant BF721T1G ELECTRICALCHARACTERISTICS (T =25 C unless otherwise noted) A Characteristic Symbol Min Max Unit OFFCHARACTERISTICS Collector-Emitter Breakdown Voltage V --300 -- Vdc (BR)CEO (I =--1.0mAdc,I =0) C B Collector-Base Breakdown Voltage V --300 -- Vdc (BR)CBO (I = --100 mAdc, I =0) C E Collector-Emitter Breakdown Voltage V --300 -- Vdc (BR)CER (I = --100 mAdc, R =2.7k ) C BE Emitter-Base Breakdown Voltage V --5.0 -- Vdc (BR)EBO (I =--10 mAdc, I =0) E C Collector-Base Cutoff Current I -- --10 nAdc CBO (V = --200 Vdc, I =0) CB E Collector--Emitter Cutoff Current I CER (V = --250 Vdc, R =2.7k ) -- --50 nAdc CE BE (V = --200 Vdc, R =2.7k T = 150 C) -- --10 mAdc CE BE J ONCHARACTERISTICS DC Current Gain h 50 -- -- FE (I =--25mAdc,V =--20Vdc) C CE Collector-Emitter Saturation Voltage V -- --0.8 Vdc CE(sat) (I =--30mAdc,I =--5.0mAdc) C B DYNAMICCHARACTERISTICS Current-Gain -- Bandwidth Product f 60 -- MHz T (V =--10Vdc,I = --10 mAdc, f = 35 MHz) CE C Feedback Capacitance C -- 1.6 pF re (V =--30Vdc,I =0,f=1.0MHz) CE C