X-On Electronics has gained recognition as a prominent supplier of BF721T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BF721T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BF721T1G ON Semiconductor

BF721T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BF721T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 100mA 300V PNP
Datasheet: BF721T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 2000
Multiples : 2000
2000 : USD 0.1797
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.961
10 : USD 0.7603
100 : USD 0.517
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Obsolete
0
MOQ : 1000
Multiples : 1000
1000 : USD 0.1049
3000 : USD 0.1049
5000 : USD 0.1007
15000 : USD 0.1007
25000 : USD 0.1007
N/A

Obsolete
0
MOQ : 4000
Multiples : 4000
4000 : USD 0.1224
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Obsolete
0
MOQ : 1852
Multiples : 1852
1852 : USD 0.2271
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.6423
10 : USD 0.5244
100 : USD 0.2812
500 : USD 0.253
1000 : USD 0.2005
2000 : USD 0.1736
10000 : USD 0.1598
25000 : USD 0.1516
50000 : USD 0.1457
N/A

Obsolete
0
MOQ : 122
Multiples : 1
122 : USD 0.2538
N/A

Obsolete
0
MOQ : 54
Multiples : 1
54 : USD 0.3023
100 : USD 0.2844
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the BF721T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF721T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BF721T1G PNP Silicon Transistor Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant BF721T1G ELECTRICALCHARACTERISTICS (T =25 C unless otherwise noted) A Characteristic Symbol Min Max Unit OFFCHARACTERISTICS Collector-Emitter Breakdown Voltage V --300 -- Vdc (BR)CEO (I =--1.0mAdc,I =0) C B Collector-Base Breakdown Voltage V --300 -- Vdc (BR)CBO (I = --100 mAdc, I =0) C E Collector-Emitter Breakdown Voltage V --300 -- Vdc (BR)CER (I = --100 mAdc, R =2.7k ) C BE Emitter-Base Breakdown Voltage V --5.0 -- Vdc (BR)EBO (I =--10 mAdc, I =0) E C Collector-Base Cutoff Current I -- --10 nAdc CBO (V = --200 Vdc, I =0) CB E Collector--Emitter Cutoff Current I CER (V = --250 Vdc, R =2.7k ) -- --50 nAdc CE BE (V = --200 Vdc, R =2.7k T = 150 C) -- --10 mAdc CE BE J ONCHARACTERISTICS DC Current Gain h 50 -- -- FE (I =--25mAdc,V =--20Vdc) C CE Collector-Emitter Saturation Voltage V -- --0.8 Vdc CE(sat) (I =--30mAdc,I =--5.0mAdc) C B DYNAMICCHARACTERISTICS Current-Gain -- Bandwidth Product f 60 -- MHz T (V =--10Vdc,I = --10 mAdc, f = 35 MHz) CE C Feedback Capacitance C -- 1.6 pF re (V =--30Vdc,I =0,f=1.0MHz) CE C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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