Product Technical OrOrdderer Folder Support NowNow InterFET IF3601 IF3601 N-Channel JFET Features TO-39 Bottom View InterFET N3600L Geometry Gate/Case 3 Ultra Low Noise: 0.5 nV/Hz Typical High Gain: 750mS Typical Drain 2 Low Rds(on): 2.0 Ohms Typical RoHS Compliant Source 1 SMT, TH, and Bare Die Package options. Applications Low-Noise, High Gain Amplifiers Description The -20V InterFET IF3601 JFET is targeted for ultra low noise high gain amplifier designs. The IF3601 has a cutoff voltage of less than 2.0V ideal for low voltage applications. The TO-39 package is hermetically sealed and suitable for military applications. Product Summary Parameters IFN3601 Min Unit BVGSS Gate to Source Breakdown Voltage -20 V IDSS Drain to Source Saturation Current 30 mA V Gate to Source Cutoff Voltage -0.35 V GS(off) G Forward Transconductance 750 Typical mS FS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IF3601T39 Through-Hole TO-39 Bulk IF3601COT Chip Orientated Tray (COT Waffle Pack) COT 100/Waffle Pack IF3601CFT Chip Face-up Tray (CFT Waffle Pack) CFT 100/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35076.R00Product Technical OrOrdderer Folder Support NowNow InterFET IF3601 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -20 V Breakdown Voltage Gate to Source IGSS VGS = -10V, VDS = 0V -0.1 nA Reverse Current Gate to Source VGS(OFF) VDS = 10V, ID = 0.5nA -0.35 -2.0 V Cutoff Voltage Drain to Source V = 0V, V = 10V GS DS IDSS 30 300 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) Parameters Conditions Min Typ Max Unit Forward G V = 10V, V = 0V, f = 1kHz 750 mS FS DS GS Transconductance C Input Capacitance V = 0V, V = -4V, f = 1MHz 300 pF iss DS GS Reverse Transfer C V = 0V, V = -4V, f = 1MHz 200 pF rss DS GS Capacitance Equivalent Circuit V = 3V, I = 5mA, f = 100Hz 0.5 DS D nV/ Hz e n Input Noise Voltage IF3601 2 of 4 InterFET Corporation Document Number: IF35076.R00 www.InterFET.com November, 2019