Ordering number : ENA1638B BFL4001 N-Channel Power MOSFET BFL4001 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =10mA, V =0V 900 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =720V, V =0V 1.0 mA DSS DS GS Gate-to-Source Leakage Current I V =30V, V =0V 100 nA GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.0 4.0 V GS DS D Forward Transfer Admittance yfs V =20V, I =3.25A 1.8 3.6 S DS D Static Drain-to-Source On-State Resistance R (on) I =3.25A, V =10V 2.1 2.7 DS D GS Input Capacitance Ciss 850 pF Output Capacitance Coss V =30V, f=1MHz 130 pF DS Reverse Transfer Capacitance Crss 43 pF Turn-ON Delay Time t (on) 19 ns d Rise Time t 49 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 156 ns d Fall Time t 52 ns f Total Gate Charge Qg 44 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =6.5A 7.0 nC DS GS D Gate-to-Drain Miller Charge Qgd 22 nC Diode Forward Voltage V I =6.5A, V =0V 0.85 1.2 V SD S GS Switching Time Test Circuit Avalanche Resistance Test Circuit V =200V PW=10s DD D.C.0.5% L I =3.25A D 50 V =10V R =61.5 GS L RG D V OUT BFL4001 10V G 50 V DD 0V BFL4001 P.G S R =50 GS Ordering Information Device Package Shipping memo BFL4001-1E TO-220F-3FS 50pcs./magazine Pb Free No. A1638-2/7