SiSS23DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) DS DS(on) D g Low Thermal Resistance PowerPAK e Package with Small Size and Low 0.75 mm 0.0045 at V = - 4.5 V - 50 GS Profile e - 20 0.0063 at V = - 2.5 V 93 nC - 50 GS 100 % R and UIS Tested g e 0.0115 at V = - 1.8 V Material categorization: For definitions of compliance - 50 GS please see www.vishay.com/doc 99912 PowerPAK 1212-8S APPLICATIONS 3.3 mm 0.75 mm Smart Phones, Tablet PCs, Mobile S Computing S S - Battery Switch 1 S 2 G 3.3 mm 3 - Load Switch 4 - Power Management G - Battery Management D D 8 D 7 D 6 5 Bottom View D Ordering Information: SiSS23DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V - 20 Drain-Source Voltage DS V V Gate-Source Voltage 8 GS e T = 25 C - 50 C e T = 70 C - 50 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 27 A a, b T = 70 C - 21 A A I - 200 Pulsed Drain Current (t = 100 s) DM T = 25 C - 47.5 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 4 A I - 23 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 26 mJ AS T = 25 C 57 C T = 70 C 36 C P Maximum Power Dissipation W D a, b T = 25 C 4.8 A a, b T = 70 C 3 A T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc 73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 62852 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S13-1162-Rev. A, 13-May-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiSS23DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b Maximum Junction-to-Ambient t 10 s R 21 26 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.7 2.2 thJC Notes: a.Surface mounted on 1 x 1 FR4 board. b.Maximum under steady state conditions is 63 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 12 mV/ DS DS J I = - 250 A D C V Temperature Coefficient V /T 3.4 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 0.9 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 20 A D(on) DS GS V = - 4.5 V, I = - 20 A 0.0035 0.0045 GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 10 A 0.0051 0.0063 DS(on) GS D V = - 1.8 V, I = - 10 A 0.0081 0.0115 GS D a Forward Transconductance g V = - 10 V, I = - 20 A 44 S fs DS D b Dynamic Input Capacitance C 8840 iss Output Capacitance C 835V = - 15 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 900 rss V = - 15 V, V = - 10 V, I = - 20 A 195 300 DS GS D Total Gate Charge Q g 93 140 nC Gate-Source Charge Q V = - 15 V, V = - 4.5 V, I = - 20 A 12 gs DS GS D Gate-Drain Charge Q 21 gd Gate Resistance R f = 1 MHz 0.5 2.6 5.2 g Turn-On Delay Time t 45 90 d(on) Rise Time t 50 100 V = - 10 V, R = 1 r DD L I - 10 A, V = - 4.5 V, R = 1 Turn-Off DelayTime t 140280 D GEN g d(off) Fall Time t 50 100 f ns Turn-On Delay Time t 15 30 d(on) Rise Time t 510 V = - 10 V, R = 1 r DD L I - 10 A, V = - 10 V, R = 1 Turn-Off DelayTime t 150300 D GEN g d(off) Fall Time t 40 80 f Drain-Source Body Diode Characteristics c Continuous Source-Drain Diode Current I T = 25 C - 50 S C A d Pulse Diode Forward Current I - 200 SM Body Diode Voltage V I = - 10 A - 0.8 - 1.2 V SD F Body Diode Reverse Recovery Time t 30 60 ns rr Body Diode Reverse Recovery Charge Q 15 30 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 16 a ns Reverse Recovery Rise Time t 14 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. d. t = 100 s. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 62852 For technical questions, contact: pmostechsupport vishay.com 2 S13-1162-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000