Product Technical OrOrdderer Folder Support NowNow InterFET IF140-A IF140, IF140A N-Channel JFET Features TO-72 Bottom View InterFET N0014L Geometry Gate 3 Low Noise: 4 nV/Hz Typical High Gain: 4.5mS Typical Drain 2 4 Case Low Ciss: 3.0pF Maximum Replacement for IF142 Source 1 RoHS Compliant SMT, TH, and Bare Die Package options. SOT23 Top View Applications Low Noise, High Gain Amplifiers Drain 1 Gate Description 3 The -20V InterFET IF140 and IF140A are targeted Source 2 for low noise high gain amplifier stages for mid to high frequencies designs. Gate leakages are typically 2pA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Product Summary Parameters IF140 Min IF140A Min Unit BVGSS Gate to Source Breakdown Voltage -20 -20 V I Drain to Source Saturation Current 5 5 mA DSS V Gate to Source Cutoff Voltage -0.3 -0.3 V GS(off) GFS Forward Transconductance 3.5 3.5 mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IF140T72 IF140AT72 Through-Hole TO-72 Bulk IF140ST3 IF140AST3 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces IF140ST3TR IF140AST3TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel IF140COT IF140ACOT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IF140CFT IF140ACFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35005.R01Product Technical OrOrdderer Folder Support NowNow InterFET IF140-A Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 375 mW D P Power Derating 3 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 200 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IF140 IF140A Parameters Conditions Min Max Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -20 -20 V Breakdown Voltage Gate to Source V = -15V, V = 0V, T = 25C -0.1 -0.1 nA GS DS A IGSS Reverse Current V = -15V, V = 0V, T = 150C -0.2 -0.2 nA GS DS A Gate to Source VGS(F) VDS = 0V, IG = 1mA 1 1 V Forward Voltage Gate to Source VGS(OFF) VDS = 15V, ID = 5nA -6 -6 V Cutoff Voltage Gate to Source VGS VDS = 15V, ID = 50A -5 -2.5 -6 V Voltage Drain to Source V = 0V, V = 15V GS DS IDSS 5 15 5 15 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IF140 IF140A Parameters Conditions Min Max Min Max Unit Forward GFS VDS = 15V, VGS = 0V, f = 1kHz 3.5 3.5 mS Transconductance Output G V = 15V, V = 0V, f = 1kHz 0.05 0.05 mS OS DS GS Conductance C Input Capacitance V = 15V, V = 0V, f = 1MHz 3 3 pF iss DS GS Reverse Transfer Crss VDS = 15V, VGS = 0V, f = 1MHz 0.6 0.6 pF Capacitance Equivalent Circuit Input VDS = 12V, VGS = 0V, f = 10Hz 4 (typ) 4 (typ) nV/ Hz en Noise Voltage IF140-A 2 of 6 InterFET Corporation Document Number: IF35005.R01 www.InterFET.com November, 2019