BF421, BF423 High Voltage Transistors PNP Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS BF421, BF423 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) BF421 300 C B BF423 250 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) BF421 300 C E 250 BF423 Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 100 Adc, I = 0) BF421 5.0 E C BF423 5.0 Collector Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) BF421 0.01 CB E BF423 Emitter Cutoff Current I nAdc EBO (V = 5.0 Vdc, I = 0) BF421 100 EB C BF423 ON CHARACTERISTICS DC Current Gain h FE (I = 25 mA, V = 20 Vdc) BF421 50 C CE BF423 50 Collector Emitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B Base Emitter Saturation Voltage V 2.0 Vdc BE(sat) (I = 20 mA, I = 2.0 mA) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 60 MHz T (I = 10 mAdc, V = 10 Vdc, f = 20 MHz) C CE Common Emitter Feedback Capacitance C 2.8 pF re (V = 30 Vdc, I = 0, f = 1.0 MHz) CB E 1. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. 300 V = 10 Vdc CE T = +125C J 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain