X-On Electronics has gained recognition as a prominent supplier of BF720T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BF720T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BF720T1G ON Semiconductor

BF720T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.BF720T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 100mA 300V NPN
Datasheet: BF720T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5183 ea
Line Total: USD 0.52 
Availability - 9898
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5824
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5767
10 : USD 0.3963
25 : USD 0.3863
100 : USD 0.2884
250 : USD 0.2413
500 : USD 0.2155
1000 : USD 0.1727
3000 : USD 0.1695
6000 : USD 0.1662

8
Ship by Wed. 27 Nov to Mon. 02 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2673
50 : USD 0.2626
150 : USD 0.2595
500 : USD 0.2392

9898
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5183
10 : USD 0.3456
100 : USD 0.2408
500 : USD 0.1939
1000 : USD 0.1784
2000 : USD 0.1594
5000 : USD 0.1494
10000 : USD 0.1494
25000 : USD 0.1427

950
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5835
10 : USD 0.4491
88 : USD 0.1927
241 : USD 0.1832
1000 : USD 0.175

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BF720T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF720T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features BF720T1G, SBF720T1G, BF720T3G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 300 C B Collector-Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 300 C E Collector-Emitter Breakdown Voltage V Vdc (BR)CER (I = 100 Adc, R = 2.7 k ) 300 C BE Emitter-Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Collector-Base Cutoff Current I nAdc CBO (V = 200 Vdc, I = 0) 10 CB E CollectorEmitter Cutoff Current I CER (V = 250 Vdc, R = 2.7 k ) 50 nAdc CE BE 10 (V = 200 Vdc, R = 2.7 k , T = 150C) Adc CE BE J ON CHARACTERISTICS DC Current Gain h FE (I = 25 mAdc, V = 20 Vdc) 50 C CE Collector-Emitter Saturation Voltage V Vdc CE(sat) (I = 30 mAdc, I = 5.0 mAdc) 0.6 C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 35 MHz) 60 C CE Feedback Capacitance C pF re (V = 30 Vdc, I = 0, f = 1.0 MHz) 1.6 CE C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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