X-On Electronics has gained recognition as a prominent supplier of BF423ZL1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BF423ZL1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BF423ZL1G ON Semiconductor

BF423ZL1G electronic component of ON Semiconductor
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Part No.BF423ZL1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 500mA 250V PNP
Datasheet: BF423ZL1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
58: USD 0.5209 ea
Line Total: USD 30.21 
Availability - 0
MOQ: 58  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6574
25 : USD 0.5016

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 58
Multiples : 1
58 : USD 0.5209
100 : USD 0.2958

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
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We are delighted to provide the BF423ZL1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BF423ZL1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BF421, BF423 High Voltage Transistors PNP Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS BF421, BF423 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) BF421 300 C B BF423 250 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) BF421 300 C E 250 BF423 Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 100 Adc, I = 0) BF421 5.0 E C BF423 5.0 Collector Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) BF421 0.01 CB E BF423 Emitter Cutoff Current I nAdc EBO (V = 5.0 Vdc, I = 0) BF421 100 EB C BF423 ON CHARACTERISTICS DC Current Gain h FE (I = 25 mA, V = 20 Vdc) BF421 50 C CE BF423 50 Collector Emitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B Base Emitter Saturation Voltage V 2.0 Vdc BE(sat) (I = 20 mA, I = 2.0 mA) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 60 MHz T (I = 10 mAdc, V = 10 Vdc, f = 20 MHz) C CE Common Emitter Feedback Capacitance C 2.8 pF re (V = 30 Vdc, I = 0, f = 1.0 MHz) CB E 1. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. 300 V = 10 Vdc CE T = +125C J 250 200 25C 150 -55C 100 50 0 0.1 1.0 10 100 I , COLLECTOR CURRENT (mA) C Figure 1. DC Current Gain

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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