MMBF4117 / MMBF4118 / MMBF4119 N-Channel Switch
February 2015
MMBF4117 / MMBF4118 / MMBF4119
N-Channel Switch
Description
G
This device is designed for low current DC and audio
applications. These devices provide excellent perfor-
mance as input stages for sub-picoamp instrumenta- S
tion or any high impedance signal sources. Sourced Note: Source & Drain
SOT-23
D
are interchangeable
from process 53.
Ordering Information
Part Number Top Mark Package Packing Method
MMBF4117 61A SOT-23 3L Tape and Reel
MMBF4118 61C SOT-23 3L Tape and Reel
MMBF4119 61E SOT-23 3L Tape and Reel
(1), (2)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Drain-Gate Voltage 40 V
DG
V Gate-Source Voltage -40 V
GS
I Forward Gate Current 50 mA
GF
T , T Operating and Storage Junction Temperature Range -55 to +150 C
J STG
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 MMBF4117 / MMBF4118 / MMBF4119 N-Channel Switch
(3)
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Max. Unit
Total Device Dissipation 225 mW
P
D
Derate Above 25C1.8mW/C
R Thermal Resistance, Junction-to-Ambient 556 C/W
JA
Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V Gate-Source Breakdown Voltage I = -1.0 A, V = 0 -40 V
(BR)GSS G DS
V = -20 V, V = 0 -10 pA
GS DS
I Gate Reverse Current
GSS
V = -20 V, V = 0, T = 150C -25 nA
GS DS A
MMBF4117 -0.6 -1.8
V Gate-Source Cut-Off Voltage V = -10 V, I = 1.0 nA MMBF4118 -1.0 -3.0 V
GS(off) DS D
MMBF4119 -2.0 -6.0
On Characteristics
MMBF4117 30 90
Zero-Gate Voltage Drain
I V = 10 V, V = 0 MMBF4118 80 240 A
DSS (4) DS GS
Current
MMBF4119 200 600
Small Signal Characteristics
MMBF4117 70 210
Common-Source Forward V = 10 V, V = 0,
DS GS
g MMBF4118 80 250 mhos
fs
Transconductance f = 1.0 kHz
MMBF4119 100 330
MMBF4117 3.0
Common-Source Output V = 10 V, V = 0,
DS GS
g MMBF4118 5.0 mhos
oss
Conductance f = 1.0 kHz
MMBF4119 10.0
MMBF4117 60
Common-Source Forward V = 10 V, V = 0,
DS GS
R MMBF4118 70 mhos
e(yfs)
Transconductance f = 30 MHz
MMBF4119 90
C Input Capacitance V = 10 V, V = 0, f = 1.0 kHz 3.0 pF
iss DS GS
C Reverse Transfer Capacitance V = 10 V, V = 0, f = 1.0 MHz 1.5 pF
rss DS GS
Note:
4. Pulse test: pulse width 300 s, duty cycle 1.0%
1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 2