PN200A / MMBT200 PNP General-Purpose Amplifier January 2014 PN200A / MMBT200 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. C E TO-92 B EBC SOT-23 Figure 1. PN200A Device Package Figure 2. MMBT200 Device Package Ordering Information Part Number Marking Package Packing Method PN200A PN200A TO-92 3L Bulk MMBT200 N2 SOT-23 3L Tape and Reel (1),(2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Emitter Voltage -45 V CEO V Collector-Base Voltage -60 V CBO V Emitter-Base Voltage -6 V EBO I Collector Current - Continuous -500 mA C T T Operating and Storage Junction Temperature Range -55 to +150 C J, STG Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com PN200A / MMBT200 Rev. 1.1.0 1 PN200A / MMBT200 PNP General-Purpose Amplifier Thermal Characteristics Values are at T = 25C unless otherwise noted. A Max. Symbol Parameter Unit (3) (4) PN200A MMBT200 Total Device Dissipation 625 350 mW P D Derate Above 25C5.02.8mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 357 C/W JA Notes: 3 3. PCB size: FR-4 76 x 114 x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit Off Characteristics BV Collector-Base Breakdown Voltage I = -10 A, I = 0 -60 V CBO C B Collector-Emitter Breakdown BV I = -1.0 mA, I = 0 -45 V CEO (5) C E Voltage BV Emitter-Base Breakdown Voltage I = -10 A, I = 0 -6.0 V EBO E C Collector Cut-Off Current V = -50 V, I = 0 -50 nA I CBO CB E Collector Cut-Off Current V = -40 V, I = 0 -50 nA I CES CE E Emitter Cut-Off Current V = -4.0 V, I = 0 -50 nA I EBO EB C On Characteristics MMBT200 80 I = -100 A, C V = -1.0 V PN200A 240 CE MMBT200 100 450 I = -10 mA, C V = -1.0 V PN200A 300 600 CE h DC Current Gain FE = -100 mA, I C PN200A 100 (5) V = -1.0 V CE MMBT200 100 350 I = -150 mA, C (5) V = -5.0 V PN200A 100 CE I = -10 mA, I = -1.0 mA -0.2 Collector-Emitter Saturation C B V (sat) V CE (5) Voltage I = -200 mA, I = -20 mA -0.4 C B I = -10 mA, I = -1.0 mA -0.85 Base-Emitter Saturation C B V (sat) V BE (5) Voltage I = -200 mA, I = -20 mA -1.00 C B Small Signal Characteristics f Current Gain - Bandwidth Product V = -20 V, I = -20 mA, 250 MHz T CE C C Output Capacitance V = -10 V, f = -1.0 MHz 6.0 pF ob CB I = -100 A, V = -5.0 V, C CE NF Noise Figure 4.0 dB R = 2.0 k, f = 1.0 kHz G Note: 5. Pulse test: pulse width 300 s, duty cycle 2.0%. 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com PN200A / MMBT200 Rev. 1.1.0 2