PN2221 PN2221A
PN2222 PN2222A
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DESCRIPTION:
NPN SILICON TRANSISTOR
The CENTRAL SEMICONDUCTOR PN2221, PN2222
series types are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
PN2221 PN2221A
MAXIMUM RATINGS: (T =25C) SYMBOL PN2222 PN2222A UNITS
A
Collector-Base Voltage V 60 75 V
CBO
Collector-Emitter Voltage V 30 40 V
CEO
Emitter-Base Voltage V 5.0 6.0 V
EBO
Continuous Collector Current I 800 mA
C
Power Dissipation P 625 mW
D
Operating and Storage Junction Temperature T , T -65 to +150 C
J stg
PN2221 PN2221A
ELECTRICAL CHARACTERISTICS: (T =25C) PN2222 PN2222A
A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
I V=50V - 10 - - nA
CBO CB
I V=60V - - - 10 nA
CBO CB
I V =60V, V=3.0V - - - 10 nA
CEV CE EB
I V=3.0V - 10 - 10 nA
EBO EB
BV I=10A 60 - 75 - V
CBO C
BV I=10mA 30 - 40 - V
CEO C
BV I=10A 5.0 - 6.0 - V
EBO E
V I =150mA, I=15mA - 0.4 - 0.3 V
CE(SAT) C B
V I =500mA, I=50mA - 1.6 - 1.0 V
CE(SAT) C B
V I =150mA, I=15mA - 1.3 - 1.2 V
BE(SAT) C B
V I =500mA, I=50mA - 2.6 - 2.0 V
BE(SAT) C B
PN2221 PN2222
PN2221A PN2222A
MIN MAX MIN MAX
h V =10V, I=0.1mA 20 - 35 -
FE CE C
h V =10V, I=1.0mA 25 - 50 -
FE CE C
h V =10V, I=10mA 35 - 75 -
FE CE C
h V =10V, I=150mA 40 120 100 300
FE CE C
h V =1.0V, I=150mA 20 - 50 -
FE CE C
h V =10V, I =500mA (PN2221, PN2222) 20 - 30 -
FE CE C
h V =10V, I =500mA (PN2221A, PN2222A) 25 - 40 -
FE CE C
f V =20V, I =20mA, f=100MHz (except PN2222A) 250 - 250 - MHz
T CE C
f V =20V, I =20mA, f=100MHz (PN2222A) - - 300 - MHz
T CE C
C V =10V, f=100kHz - 8.0 - 8.0 pF
ob CB
t V =30V, I =150mA, I=15mA - 35 - 35 ns
on CC C B
t V =30V, I =150mA, I =I=15mA - 285 - 285 ns
off CC C B1 B2
R1 (30-January 2012)PN2221 PN2221A
PN2222 PN2222A
NPN SILICON TRANSISTOR
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R1 (30-January 2012)
www.centralsemi.com