PN200A / MMBT200 PNP General-Purpose Amplifier
January 2014
PN200A / MMBT200
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
applications at collector currents to 300 mA. Sourced
from Process 68.
C
E
TO-92
B
EBC SOT-23
Figure 1. PN200A Device Package Figure 2. MMBT200 Device Package
Ordering Information
Part Number Marking Package Packing Method
PN200A PN200A TO-92 3L Bulk
MMBT200 N2 SOT-23 3L Tape and Reel
(1),(2)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Collector-Emitter Voltage -45 V
CEO
V Collector-Base Voltage -60 V
CBO
V Emitter-Base Voltage -6 V
EBO
I Collector Current - Continuous -500 mA
C
T T Operating and Storage Junction Temperature Range -55 to +150 C
J, STG
Notes:
1. These ratings are based on a maximum junction temperature of 150C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN200A / MMBT200 Rev. 1.1.0 1 PN200A / MMBT200 PNP General-Purpose Amplifier
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Max.
Symbol Parameter Unit
(3) (4)
PN200A MMBT200
Total Device Dissipation 625 350 mW
P
D
Derate Above 25C5.02.8mW/C
R Thermal Resistance, Junction to Case 83.3 C/W
JC
R Thermal Resistance, Junction to Ambient 200 357 C/W
JA
Notes:
3
3. PCB size: FR-4 76 x 114 x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol
Parameter Conditions Min. Max. Unit
Off Characteristics
BV Collector-Base Breakdown Voltage I = -10 A, I = 0 -60 V
CBO C B
Collector-Emitter Breakdown
BV I = -1.0 mA, I = 0 -45 V
CEO (5) C E
Voltage
BV Emitter-Base Breakdown Voltage I = -10 A, I = 0 -6.0 V
EBO E C
Collector Cut-Off Current V = -50 V, I = 0 -50 nA
I
CBO CB E
Collector Cut-Off Current V = -40 V, I = 0 -50 nA
I
CES CE E
Emitter Cut-Off Current V = -4.0 V, I = 0 -50 nA
I
EBO EB C
On Characteristics
MMBT200 80
I = -100 A,
C
V = -1.0 V
PN200A 240
CE
MMBT200 100 450
I = -10 mA,
C
V = -1.0 V
PN200A 300 600
CE
h DC Current Gain
FE
= -100 mA,
I
C
PN200A 100
(5)
V = -1.0 V
CE
MMBT200 100 350
I = -150 mA,
C
(5)
V = -5.0 V
PN200A 100
CE
I = -10 mA, I = -1.0 mA -0.2
Collector-Emitter Saturation C B
V (sat) V
CE
(5)
Voltage
I = -200 mA, I = -20 mA -0.4
C B
I = -10 mA, I = -1.0 mA -0.85
Base-Emitter Saturation C B
V (sat) V
BE
(5)
Voltage
I = -200 mA, I = -20 mA -1.00
C B
Small Signal Characteristics
f Current Gain - Bandwidth Product V = -20 V, I = -20 mA, 250 MHz
T CE C
C Output Capacitance V = -10 V, f = -1.0 MHz 6.0 pF
ob CB
I = -100 A, V = -5.0 V,
C CE
NF Noise Figure 4.0 dB
R = 2.0 k, f = 1.0 kHz
G
Note:
5. Pulse test: pulse width 300 s, duty cycle 2.0%.
1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN200A / MMBT200 Rev. 1.1.0 2