PMBFJ309,215 NXP

PMBFJ308 PMBFJ309 PMBFJ310 N-channel silicon field-effect transistors Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low noise Interchangeability of drain and source connections High gain. 1.3 Applications AM input stage in car radios VHF amplifiers Oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 25 V DS V gate-source cut-off voltage GSoff PMBFJ308 V =10V I =1 A 1- 6.5 V DS D PMBFJ309 V =10V I =1 A 1- 4V DS D PMBFJ310 V =10V I =1 A 2- 6.5 V DS D SOT23PMBFJ308 PMBFJ309 PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit I drain current DSS PMBFJ308 V =0V V =10V 12 - 60 mA GS DS PMBFJ309 V =0V V =10V 12 - 30 mA GS DS PMBFJ310 V =0V V =10V 24 - 60 mA GS DS P total power dissipation up to T =25 C --250mW tot amb y forward transfer admittance V =10V I=10mA 10 --mS fs DS D 2. Pinning information 1 Table 2. Discrete pinning Pin Description Simplified outline Symbol 1source 3 2 2drain 3 1 sym060 3gate 12 1 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBFJ308 - plastic surface mounted package 3 leads SOT23 PMBFJ309 PMBFJ310 4. Marking Table 4. Marking 1 Type number Marking code PMBFJ308 48* PMBFJ309 49* PMBFJ310 50* 1 * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. PMBFJ308 309 310 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 20 September 2011 2 of 15