X-On Electronics has gained recognition as a prominent supplier of PMBS3906,235 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PMBS3906,235 Bipolar Transistors - BJT are a product manufactured by Nexperia. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PMBS3906,235 Nexperia

PMBS3906,235 electronic component of Nexperia
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Part No.PMBS3906,235
Manufacturer: Nexperia
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS SW TAPE-11
Datasheet: PMBS3906,235 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.0143 ea
Line Total: USD 143 
Availability - 0
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.0253
20000 : USD 0.0252
50000 : USD 0.0251
500000 : USD 0.0249

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.0143
20000 : USD 0.0132
50000 : USD 0.011

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PMBS3906,235 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMBS3906,235 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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PMBS3906 40 V, 100 mA PNP general-purpose transistor 5 June 2018 Product data sheet 1. General description PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PMBS3904 2. Features and benefits 100 mA collector current capability 3. Applications General-purpose switching and amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -40 V CEO voltage I collector current - - -100 mA C h DC current gain V = -1 V I = -10 mA T = 25 C 100 - 300 FE CE C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base 3 C 2 E emitter B 3 C collector E 006aab259 1 2 TO-236AB (SOT23)Nexperia PMBS3906 40 V, 100 mA PNP general-purpose transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBS3906 TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMBS3906 %O6 1 % = placeholder for manufacturing site code 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - -40 V CBO V collector-emitter voltage open base - -40 V CEO V emitter-base voltage open collector - -5 V EBO I collector current - -100 mA C I peak collector current - -200 mA CM I peak base current - -200 mA BM P total power dissipation T 25 C - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -65 150 C amb T storage temperature -65 150 C stg 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance in free air 1 - - 500 K/W th(j-a) from junction to ambient 1 Device mounted on an FR4 Printed-Circuit Board (PCB). PMBS3906 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 5 June 2018 2 / 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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