X-On Electronics has gained recognition as a prominent supplier of GTVA123501FA-V1-R0 RF JFET Transistors across the USA, India, Europe, Australia, and various other global locations. GTVA123501FA-V1-R0 RF JFET Transistors are a product manufactured by Wolfspeed. We provide cost-effective solutions for RF JFET Transistors, ensuring timely deliveries around the world.

GTVA123501FA-V1-R0 Wolfspeed

GTVA123501FA-V1-R0 electronic component of Wolfspeed
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Part No.GTVA123501FA-V1-R0
Manufacturer: Wolfspeed
Category: RF JFET Transistors
Description: RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 350W
Datasheet: GTVA123501FA-V1-R0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 804.419 ea
Line Total: USD 804.42 
Availability - 37
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
37
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 804.419
10 : USD 778.239
25 : USD 773.971
50 : USD 773.421
100 : USD 773.388
250 : USD 773.256
500 : USD 773.168
1000 : USD 773.058
2500 : USD 772.838

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Mounting Style
Package / Case
Packaging
Brand
Development Kit
Product Type
Factory Pack Quantity :
Subcategory
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the GTVA123501FA-V1-R0 from our RF JFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GTVA123501FA-V1-R0 and other electronic components in the RF JFET Transistors category and beyond.

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GTVA123501FA Thermally-Enhanced High Power RF GaN on SiC HEMT 350 W, 50 V, DC - 1.4 GHz Description The GTVA123501FA is a 350-watt GaN on SiC high electron mobility transistor (HEMT) for use in the DC - 1.4 GHz frequency band. It features input matching, high efficiency, and a thermally-enhanced surface-mount GTVA123501FA package with earless flange. Package H-37265J-2 Features Power Sweep, Pulsed CW GaN on SiC HEMT technology V = 50 V, I = 100 mA DS DQ Input matched 300 s pulse width, 10% duty cycle Typical pulsed CW performance: pulse width = 300 s, duty cycle = 10%, DC - 1.4 Hz, V = 50 V, I = 100 mA DS DQ 22 80 - Output power = 350 W min P 3dB - Drain Efficiency = 70 % 70 21 - Gain = 18 dB 60 20 Human Body Model Class 1B (per ANSI/ESDA/JEDEC JS-001) 50 19 Capable of handling 10:1 VSWR (all phase angles) at 40 V = 50 V, I = 100 mA, = 1300 MHz, P = 350 W Gain: 1200 MHz DS DQ OUT 18 30 peak Gain: 1300 MHz Gain: 1400 MHz 17 Pb-free and RoHS compliant 20 Eff: 1200 MHz Eff: 1300 MHz 16 10 Eff: 1400 MHz g123501fa gr300-1 15 0 0 50 100 150 200 250 300 350 400 450 Output Power (W) RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) V = 50 V, I = 100 mA, P = 350 W, = 1300 MHz, pulse width = 300 s, 10% duty cycle DD DQ OUT Characteristic Symbol Min Typ Max Unit Gain G 19.4 20 21.5 dB ps Drain Efficiency h 70 74 % D All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 03, 2019-01-07 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain (dB) Efficiency (%)GTVA123501FA 2 Typical Performance (data taken in a Wolfspeed production test fixture) Power Sweep, Pulsed CW Power Sweep, Pulsed CW V = 50 V, I = 100 mA, DS DQ V = 50 V, I = 100 mA, DS DQ 2 ms pulse width, 20% duty cycle 1 ms pulse width, 10% duty cycle 22 80 22 80 70 70 21 21 60 60 20 20 50 50 19 19 40 40 Gain: 1200MHz 18 18 Gain: 1300MHz 30 30 1200 MHz - Gain Gain: 1400MHz 1300 MHz - Gain 17 17 20 20 1400 MHz - Gain Eff: 1200 MHz 1200 MHz - Eff Eff: 1300MHz 16 16 10 1300 MHz - Eff 10 Eff: 1400MHz 1400 MHz - Eff g123501fa gr20-3 15 0 g123501fa gr10-2 15 0 0 50 100 150 200 250 300 350 400 450 0 50 100 150 200 250 300 350 400 450 Output Power (W) Output Power (W) Load Pull Performance Pulsed CW signal: 16 sec pulse width, 10% duty cycle, V = 50 V, I = 300 mA, compression level = P DS DQ 3dB Class AB Max Output Power Freq Zs Zl Gain P P PAE OUT OUT MHz dB % W W dBm W 1200 1.91 j4.59 2.64 j0.41 18.9 56.85 484 68.2 1300 4.57 j4.77 2.60 j1.02 18.4 56.59 456 65.8 1400 4.70 + j1.32 1.98 j0.34 18.6 56.41 438 66.5 Pulsed CW signal: 16 sec pulse width, 10% duty cycle, V = 50 V, I = 300 mA, compression level = P DS DQ 3dB Class AB Max Efficiency Freq Zs Zl Gain P P PAE OUT OUT MHz dB % W W dBm W 1200 1.91 j4.59 3.55 j0.13 19.2 56.42 439 72.3 1300 4.57 j4.77 3.35 + j0.10 19.1 56.05 403 71.0 1400 4.70 + j1.32 1.83 j0.04 19.0 56.20 417 68.0 Pulsed CW signal: 16 sec pulse width, 10% duty c ycle, V = 50 V, I = 300 mA, compression level = P DS DQ 3dB Class AB Z Optimal Freq Zs Zl Gain P P PAE OUT OUT MHz dB % W W dBm W 1200 1.91 j4.59 4.54 + j0.53 19.3 55.63 366 72.2 1300 4.57 j4.77 3.80 + j0.25 19.2 55.64 366 73.8 1400 4.70 + j1.32 2.69 + j0.19 18.8 55.75 376 72.2 Rev. 03, 2019-01-07 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. 03, 2019-01-07 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Gain (dB) Efficiency (%) Gain (dB) Efficiency (%)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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