SXA389Z 400MHz-2500MHz, 1/4W GaAs HBT Amplifier Product Overview The SXA389Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC amplifier housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated by using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These SOT-89 Package amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400 MHz to 2500 MHz of cellular, ISM, WLL, PCS and W-CDMA applications. Key Features On Chip Active Bias Control The SXA389Zs internal active bias circuitry allows the amplifier to operate directly from a 5V supply and provides Single Supply, 5V Operation stable current over temperature. High Output IP3, +42 to +44dBm Typ. High Output P1dB, +25dB, Typ. High Gain, +19dB at 850 MHz High Efficiency, only 600 mW Consumption Patented High Reliability GaAs HBT Technology Surface Mountable Power Plastic Package Applications Functional Block Diagram W-CDMA, PCS, Cellular Systems High Linearity IF Amplifiers Multi-Carrier Applications Ordering Information Part No. Description SXA389ZTR7 1,000 pieces on a 7 reel Top View SXA389ZEVB-3 2140MHz Evaluation Board Datasheet, May 28, 2021 Subject to change without notice 1 of 15 www.qorvo.com SXA389Z 400MHz-2500MHz, 1/4W GaAs HBT Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Maximum Storage Temperature +150C Device Voltage (VCC) +5 V Device Voltage (VCC) +6.0 V TCASE 40 +85 C Electrical specifications are measured at specified test conditions. Device Current (ICC) 240 mA Specifications are not guaranteed over all recommended operating RF Input Power 100 mW conditions. Maximum Power Dissipation 1500 mW Junction Temperature (T ) +165C J Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units 850 MHz 19.0 dB 1960 MHz 14.0 dB Gain, Small Signal 2140 MHz 12.5 13.5 15.0 dB 2450 MHz 13.0 dB 850 MHz 1.3:1 - 1960 MHz 1.4:1 - Input VSWR 2140 MHz 1.3:1 - 2450 MHz 1.1:1 - 850 MHz 25.0 dBm 1960 MHz 25.0 dBm Output P1dB 2140 MHz 24.0 25.0 dBm 2450 MHz 25.0 dBm 850 MHz 43.0 dBm 1960 MHz 44.0 dBm (2) Output IP3 2140 MHz 39.0 42.0 dBm 2450 MHz 42.0 dBm 850 MHz 4.7 dB 1960 MHz 5.5 dB Noise Figure 2140 MHz 6.0 dB 2450 MHz 6.0 dB Device Operating Current, ICC Pin 3 90 115 122 mA Operating Power Dissipation 575 610 mW Thermal Resistance, Junction to backside 100 C/W jc Notes: 1. Test conditions unless otherwise noted: V = +5.0V, Temp=+25C, 50 test system CC 2. P = 11 dBm/tone, f=1MHz OUT Datasheet, May 28, 2021 Subject to change without notice 2 of 15 www.qorvo.com