SZM-3066Z 3.3GHz to 3.8GHz 2W Power Ampli- fier SZM-3066Z 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description Features RFMDs SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) ampli- P =33.5dBm at 5V 1dB fier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an Three Stages of Gain:34dB ideal combination of low cost and high reliability. This product is specifically designed as a final 802.11g 54Mb/s Class AB Per- or driver stage for 802.16 equipment in the 3.3GHz to 3.8GHz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for formance other applications or over narrower bands. It features an output power detector, on/off power P =26dBm at 2.5% EVM, V control and high RF overdrive robustness. A 20dB step attenuator feature can be utilized by OUT CC switching the second stage Power up/down control. This product features a RoHS compliant 5V,730mA and Green package with matte tin finish, designated by the Z suffix. Active Bias with Adjustable Cur- rent Optimum Technology Matching Applied On-Chip Output Power Detector GaAs HBT Low Thermal Resistance GaAs MESFET Power Up/Down Control <1s InGaP HBT SiGe BiCMOS Attenuator Step 20dB at V =0V Si BiCMOS PC2 SiGe HBT Class 1B ESD Rating GaAs pHEMT Si CMOS Applications Si BJT 802.16 WiMAX Driver or Output GaN HEMT Stage RF MEMS Fixed Wireless, WLL Specification Parameter Unit Condition Min. Typ. Max. Frequency of Operation 3300 3800 MHz Output Power at 1dB Compression 33.5 dBm 3.5GHz Gain 32.534.0 dBm P =26dBm-3.5GHz OUT Output power 26.0 dBm 2.5% EVM 802.11g 54Mb/s - 3.5GHz =23dBm per tone - 3.5GHz Third Order Suppression -38.0 -33.0 dBc P OUT Noise Figure 5.0 dB 3.6GHz Worst Case Input Return Loss 11.0 14.0 dB 3.3GHz to 3.8GHz Worst Case Output Return Loss 6.0 9.0 dB 3.3GHz to 3.8GHz Supply voltage range 3.0 5.0 6.0 V Output Voltage Range 0.9 to 2.2 V for P =10dBm to 30dBm OUT Quiescent Current 540 600 660 mA V =5V CC Power Up Control Current 5.0 mA V =5V, I +I +I PC VPC1 VPC2 VPC3 VCC Leakage Current 0.1 mA V =5V, V =0V CC PC Thermal Resistance 12.0 C/W junction - lead Test Conditions: 3.3GHz to 3.8GHz App circuit, Z =50, V =5V, I =600mA, T =30C 0 CC Q BP RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS131017 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 12SZM-3066Z Absolute Maximum Ratings Parameter Rating Unit Cau t ion ESD sen sitive de vice. VC3 Collector Bias Current (I ) 1500 mA Exceeding any one or a combination of the Absolute Maximum Rating conditions may VC3 cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical VC2 Collector Bias Current (I)600 mA VC2 performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. VC1 Collector Bias Current (I)300 mA VC1 RoHS status based on EU Directive 2011/65/EU (at time of this document revision). *Device Voltage (V ) 9.0 V D The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for Power Dissipation 6 W any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of **Max RF output Power for 50 con- 30 dBm RFMD. RFMD reserves the right to change component circuitry, recommended tinuous long term operation application circuitry and specifications at any time without prior notice. Max RF Input Power for 10:1 VSWR 5dBm output load Storage Temperature Range -40 to +150 C Operating Temp Range (T ) -40 to +85 C L ESD Rating - Human Body Model 500 V Maximum Junction Temperature for 150 C long term reliability, Tj Max *Note: No RF Drive **Note: With specified application circuit Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , D D J L TH j-l Typical Performance 3.3Ghz to 3.8GHz App Circuit (V =5V, I =600mA, 802.11g 54mb/s 64QAM) CC CQ Parameter Units 3.3GHz 3.4Ghz 3.5GHz 3.6GHz 3.7GHz 3.8GHz Gain P =26dBm dB 35.2 35.2 35.2 34.5 32.8 30.0 OUT P1dB dBm 34.4 34.3 34.3 34.1 33.9 33.0 P 2.5% EVM dBm 26.5 26.5 26.5 26.5 26.0 26.0 OUT Current P 2.5% EVM mA 769 769 752 750 750 720 OUT Input Return Loss dB 14 17 19 21 19 16 Output Return Loss dB 10.0 10.5 10.0 9.0 9.0 8.0 Step Attenuation (V =0V) dB 23.0 22.0 22.0 21.0 18.0 15.0 PC2 Simplified Device Schematic 31 40 GND 1 30 GND VC1 NC VBIAS12 RFOUT NC RFOUT NC RFOUT RFIN RFOUT RFOUT NC VPC1 RFOUT VPC2 NC 10 21 GND GND 11 20 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 12 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS131017 NC NC NC NC VC2A VC2B C1A C1B C2A C2B VB3A VB3B NC NC NC NC VPC3 VBIAS3 NC VDET