SPF5344Z 800 - 4000 MHz Low Noise MMIC Amplifier Product Description The SPF5344Z is a high performance 2-Stage pHEMT MMIC LNA designed for use from 0.8GHz to 4GHz. It offers low noise figure and high linearity in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. The off-chip interstage choke and DC block allow for optimum 20-pin 4mmx4mmQFN Package performance tuning. Key Features Applications Low Noise Figure = 0.80 dB at 2.0 GHz Cellular, PCS, W-CDMA, ISM, WiMAX Receivers Gain = 24.5 dB at 2.0 GHz PA Driver Amplifier OIP3 = 39 dBm at 2.0 GHz Low Noise, High Linearity Gain Block Applications Excellent Return Loss: S11 > 20 dB, S22 > 20 dB at 2.0 GHz P1dB = 22.4 dBm at 2.0 GHz Single - Supply Operation: 5 V at IDQ = 120 mA Flexible Biasing Options: 3 5 V, Adjustable Current Broadband Internal Matching Ordering Information Part No. Description SPF5344Z 8004000 MHz Dual LNA SPF5344ZPCK1 17002200 MHz Evaluation Board Standard T/R size = 3000 pieces on a 13 reel Data Sheet September 10, 2019 Subject to change without notice 1 of 11 www.qorvo.com SPF5344Z 800 4000 MHz Low Noise MMIC Amplifier Absolute Maximum Ratings Recommended Operating Conditions (1) Parameter Min Typ Max Units Parameter Rating Storage Temperature 65 to 150C V +3 +5 V d Drain Voltage (V ) +5.5 V Operating Temp. Range 40 +85 C d (2) Device Current (Id) 220 mA Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating (3) Input Power (CW) +24 dBm conditions. Dissipated Power 1200 mW Junction Temperature 150C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =Source Lead Temperature. D D J L TH L 2. 100mA 1st Stage, 120mA 2nd Stage. 3. Load condition 1: Z = 50 ,Load Condition 2: Z = 10:1 VSWR L L Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 800 4000 MHz Gain At 900 MHz 34.5 dB Gain At 2000 MHz 22.1 24.5 26.9 dB Gain At 2200 MHz 22.5 dB Input Return Loss 25.0 dB Output Return Loss 25.0 dB Reverse Isolation 32.5 dB Output P1dB At 900 MHz +21.8 dBm Output P1dB At 2000 MHz +22.4 dBm Output P1dB At 2200 MHz +22.7 dBm Output IP3 At 900 MHz, Pout=+0 dBm/tone, f=1 MHz +35.5 dBm Output IP3 At 2000 MHz, Pout=+0 dBm/tone, f=1 MHz +35 +39.0 dBm Output IP3 At 2200 MHz, Pout=+0 dBm/tone, f=1 MHz +39.0 dBm (2) Noise Figure At 900 MHz 0.7 dB (2) Noise Figure At 2000 MHz 0.8 dB (2) Noise Figure At 2200 MHz 0.9 dB Device Current, Id 100 120 160 mA Thermal Resistance, jc Junction to Lead, 1st stage 65 C/W Thermal Resistance, Junction to Lead, 2nd stage 65 C/W jc Notes: 1. Test conditions unless otherwise noted: V = +5.0V, Temp.=+25C, 50 system. d 2. The Noise Figure value includes evaluation board losses. Data Sheet September 10, 2019 Subject to change without notice 2 of 11 www.qorvo.com