SZA-5044(Z) 4.9GHz to 5.9GHz 5V Power Ampli- fier SZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description Features RFMDs SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor 802.11a 54Mb/s Class AB Per- (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT formance P =22dBm at 3% OUT amplifier is made with InGaP on GaAs device technology and fabricated with EVM, 5V, 343mA MOCVD for an ideal combination of low cost and high reliability. This product is spe- High Gain=33dB cifically designed as a final or driver stage for 802.11a equipment in the Output Return Loss >11dB for 4.9GHzto5.9GHz band for a 5V supply. Optimized on-chip impedance matching cir- Linear Tune cuitry provides a 50 nominal RF input impedance. A single external output match- ing circuit covers the entire 4.9GHzto5.9GHz band simultaneously. The external On-Chip Output Power Detector output match allows for load line optimization for other appli- P =30dBm at 5V Optimum Technology 1dB cations or optimized performance over narrower bands. This Matching Applied product is available in a RoHS Compliant and Green package Simultaneous 4.9GHz to 5.9GHz GaAs HBT with matte tin finish, designated by the Z package suffix. Performance GaAs MESFET Robust - Survives RF Input Power InGaP HBT =+15dBm SiGe BiCMOS Power Up/Down Control <1ms, Si BiCMOS V 2.9Vto5V PC SiGe HBT GaAs pHEMT Applications Si CMOS 802.11a WiFi, OFDM Si BJT 5.8GHz ISM Band, 802.16 GaN HEMT WiMAX RF MEMS Specification Parameter Unit Condition Min. Typ. Max. Frequency of Operation 4900 5900 MHz Output Power at 1dB Compression 30.2 dBm 5.15GHz 27.5 29.0 dBm 5.875GHz Gain 30.7 32.7 34.7 dB 4.9GHz 33.0 dB 5.15GHz 25.7 27.7 29.7 dB 5.875GHz Output Power 21.0 dBm 3% EVM 802.11a 54Mb/s-5.15GHz 22.0 dBm 3% EVM 802.11a 54Mb/s-5.875GHz Noise Figure 6.3 dB 5.875GHz Third Order Intermod -39.0 -35.0 dBc 5.875GHz, 18dBm per tone Worst Case Input Return Loss 8.6 11.6 dB 4.9GHzto5.875GHz Worst Case Output Return Loss 9.3 12.3 dB 4.9GHzto5.875GHz Output Voltage Range 0.8to1.9 V P =10dBmto26dBm OUT V Quiescent Current 230 270 310 mA CC Power Up Control Current 1.7 mA V =5V (I +I +I ) PC VPC1 VPC2 VPC3 Off V Leakage Current 8 100 uA V =0V CC PC Thermal Resistance (junction-lead 24 C/W junction - lead 802.11ac Output power 21.0 dBm 1.8% EVM 802.11ac HT80 MCS9 5.21GHz to 5.77GHz 802.11ac Operating Current 330 mA P =21dBm OUT Test Conditions: Z =50, V =5V, I =270mA, T =25C 0 CC CQ BP RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS130402 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 12SZA-5044(Z) Absolute Maximum Ratings Parameter Rating Unit Caution ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may VC3 Collector Bias Current (pin 16) 500 mA cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- VC2 Collector Bias Current (pin 18) 225 mA mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. VC1 Collector Bias Current (pin 19) 75 mA RoHS status based on EUDirective2002/95/EC (at time of this document revision). Device Voltage (V ), No RF drive 7.0 V D The information in this publication is believed to be accurate and reliable. However, no Power Dissipation 3.4 W responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Operating Lead Temperature (T)-40to+85 C license is granted by implication or otherwise under any patent or patent rights of L RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. RF Input Power for 50 RF out load 15 dBm RF Input Power for 10:1 VSWR RF out 2dBm load Storage Temperature Range -40to+150 C Operating Junction Temperature (T)150 C J ESD Rating - Human Body Model >1000 V (HBM) Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l D D J L TH Simplified Device Schematic Pin Pin Pin Pin Pin Pin Pin 6 20 19 7 18 8 16 Stage 1 Stage 2 Stage 3 Bias Bias Bias Pin Pin 2, 4 11,12,13, 14,15 EPAD Pin EPAD EPAD 10 L 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 12 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS130402