STA-5063Z 3.3GHz to 6.2GHz Gen- eral Purpose 3.3V 15dBm Amplifier STA-5063Z 3.3GHz to 6.2GHz GENERAL PURPOSE 3.3V 15dBm AMPLIFIER Package: SOT-363, 2.0mmx2.1mm Product Description Features RFMDs STA-5063Z is a general purpose class A linear amplifier which utilizes Linear Class A Performance InGaP GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost P =17.5dBm at 3.5GHz 1dB surface- mountable plastic package. This product is specifically designed as a driver amplifier for WiFi 802.11a and 5.8GHz ISM band and 3.3GHz to 3.8GHz P =15dBm at 5.9GHz 1dB fixed wireless applications. It can run from a fixed 3.0V to 3.6V supply with its on IP =30dBm at 3.5GHz 3 chip active bias network which includes a power up and down control. On-chip impedance matching circuitry provides a 50 nominal RF input and output imped- IP =27dBm at 5.9GHz 3 ance. Its high linearity makes it an ideal choice for multicarrier and digital applica- Power Up/Down Control<1uS tions. Housed in an industry standard SOT-363 package, it has Optimum Technology Matching Applied no blind solder joints and designed for low cost. This product is Active Bias Controlled GaAs HBT offered in a RoHS Compliant and Green package with matte Robust Class 1C ESD Rating GaAs MESFET tin finish, designated by the Z package suffix. InGaP HBT Applications SiGe BiCMOS Si BiCMOS Driver Stage for 802.11a SiGe HBT Access Points GaAs pHEMT Wimax 802.16 Driver Stage Si CMOS Low Power 5.8GHz ISM Out- Si BJT put Stage GaN HEMT InP HBT Fixed Wireless, UNII Driver Stage BiFET HBT LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 17.5 19.0 21.0 dB 3.5GHz with 3GHz app circuit 13.2 14.7 16.7 dB 5.1GHz with 5GHz app circuit 12.5 14.0 16.0 dB 5.9GHz with 5GHz app circuit Output Power at 1dB Compression 17.5 dBm 3.5GHz with 3GHz app circuit 15.0 dBm 5.1GHz with 5GHz app circuit 13.5 15.0 dBm 5.9GHz with 5GHz spp circuit Output Third Order Intercept Point 28.0 30.0 dBm 3.5GHz 25.0 27.0 dBm 5.9GHz Frequency of Operation 3.3 6.2 GHz Noise Figure 9.0 10.5 dB 5.9GHz Input VSWR 1.5 2.0 5.1GHzto5.9GHz for 5GHz app circuit Output VSWR 2.0 2.6 5.1GHzto5.9GHz for 5GHz app circuit Total Device Current 42.0 52.0 62.0 mA Thermal Resistance 150 C/W junction to backside Test Conditions: Evaluation Board, Z =50 , V =3.3V, I =52mA, T=25C 0 CC Q RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS110620 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 10STA-5063Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (l)80 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- ESD Rating (HBM) 1000 V mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Total Device Current (I) 80 mA RoHS status based on EUDirective2002/95/EC (at time of this document revision). Device Voltage (Pins 1 and 3) 4 V The information in this publication is believed to be accurate and reliable. However, no Device Voltage (Pin 4) 5.5 V responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No Max RF Input Power 15 dBm license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended appli- Power Dissipation 0.40 W cation circuitry and specifications at any time without prior notice. Max Junction Temperature (T ) 150 C J Operating Temperature Range (T ) -40 to + 85 C L Max Storage Temperature -40to+150 C Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , D D J L TH j-l Simplified Device Schematic PIN 3 PIN 1 PIN 4 Active Bias PIN 2 PIN 5 PIN 6 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 10 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS110620